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MJD31CT4-A

P1-P3P4-P6P7-P9P10-P12P13-P13
This is information on a product in full production.
June 2012 Doc ID 13473 Rev 4 1/13
13
MJD31CT4-A
Low voltage NPN power transistor
Datasheet − production data
Features
■ This device is qualified for automotive
application
■ Surface-mounting TO-252 power package in
tape and reel
■ Complementary to the PNP type MJD32C
Application
■ General purpose linear and switching
equipment
Description
The device is manufactured in planar technology
with “base island” layout. The resulting transistor
shows exceptional high gain performance
coupled with very low saturation voltage.
Figure 1. Internal schematic diagram
DPAK
TO-252
1
3
TA B
Table 1. Device summary
Order code Marking Package Packaging
MJD31CT4-A MJD31C DPAK Tape and reel
www.st.com
Electrical ratings MJD31CT4-A
2/13 Doc ID 13473 Rev 4
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) 100 V
V
CEO
Collector-emitter voltage (I
B
= 0) 100 V
V
EBO
Emitter-base voltage (I
C
= 0) 5 V
I
C
Collector current 3 A
I
CM
Collector peak current 5 A
I
B
Base current 1 A
P
TOT
Total dissipation at T
c
= 25 °C 15 W
T
STG
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case max 8.3 °C/W
R
thJPCB
(1)
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
Thermal resistance junction-pcb max 50 °C/W
MJD31CT4-A Electrical characteristics
Doc ID 13473 Rev 4 3/13
2 Electrical characteristics
T
case
= 25 °C unless otherwise specified.
2.1 Electrical characteristic (curves)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
Collector cut-off current
(V
BE
= 0)
V
CE
= 100 V - 20 µA
I
CEO
Collector cut-off current
(I
B
= 0)
V
CB
= 60 V - 50 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V - 0.1 mA
V
CEO(sus)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Collector-emitter
sustaining voltage
(I
B
= 0)
I
C
= 30 mA 100 - V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 3 A _ I
B
= 375 mA - 1.2 V
V
BE(on)
(1)
Base-emitter on voltage I
C
= 3 A _ V
CE
= 4 V - 1.8 V
h
FE
DC current gain
I
C
= 1 A _ _ V
CE
= 4 V
I
C
= 3 A V
CE
= 4 V
25
10
-
50
Figure 2. Safe operating area Figure 3. Derating curve
P1-P3P4-P6P7-P9P10-P12P13-P13

MJD31CT4-A

Mfr. #:
Buy MJD31CT4-A
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT LO VLT NPN PWR TRANS
Lifecycle:
New from this manufacturer.
Delivery:
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