© 2009 IXYS All rights reserved
1 - 4
20090209d
IXKP 24N60C5M
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specifi ed)
min. typ. max.
R
DSon
V
GS
= 10 V; I
D
= 10 A 150 165
mΩ
V
GS(th)
V
DS
= V
GS
; I
D
= 0.79 mA 2.5 3 3.5 V
I
DSS
V
DS
= 600 V;
V
GS
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
10
1µA
µA
I
GSS
V
GS
=
±
20 V; V
DS
= 0 V
100 nA
C
iss
C
oss
V
GS
= 0 V; V
DS
= 100 V
f = 1 MHz
2000
100
pF
pF
Q
g
Q
gs
Q
gd
V
GS
= 0 to 10 V; V
DS
= 400 V; I
D
= 12 A
40
9
13
52 nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V; V
DS
= 400 V
I
D
= 12 A; R
G
= 3.3 Ω
12
5
50
5
ns
ns
ns
ns
R
thJC
3.65 K/W
I
D25
= 8.5 A
V
DSS
= 600 V
R
DS(on) max
= 0.165 Ω
CoolMOS
™ 1)
Power MOSFET
Features
• fast CoolMOS
™
1)
power MOSFET
4
th
generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
MOSFET
Symbol Conditions Maximum Ratings
V
DSS
T
VJ
= 25°C 600 V
V
GS
±
20
V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
8.5
6.0
A
A
E
AS
E
AR
single pulse
repetitive
522
0.79
mJ
mJ
dV/dt
MOSFET dV/dt ruggedness V
DS
= 0...480 V 50 V/ns
D
G
S
Fully isolated package
N-Channel Enhancement Mode
Low R
DSon
, High V
DSS
MOSFET
Ultra low gate charge
TO-220 FP
G
D
S
I
D
= 7.9 A; T
C
= 25°C
1)
CoolMOS
™
is a trademark of
Infi neon Technologies AG.
Preliminary data
