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BFU520XRR
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P22
BFU520XR
All information pr
ovided in this d
ocument is subje
ct to legal discl
aimers.
© NXP Semiconduc
tors N.V
. 2014. All rights re
serv
ed.
Product data sheet
Rev
. 1
— 5 March 2014
10 of 22
NXP Semiconductors
BFU520XR
NPN wideband silicon RF transistor
V
CE
=8V
;
T
amb
=2
5
C.
(1)
f = 300 MHz
(2)
f = 433 MHz
(3)
f = 800 MHz
(4)
f = 900 MHz
(5)
f = 1800 MHz
V
CE
=8V
;
T
amb
=2
5
C.
If K >1 then G
p(max)
= maximum power gain. If K < 1 then
G
p(max)
= MSG
.
(1)
f = 300 MHz
(2)
f = 433 MHz
(3)
f = 800 MHz
(4)
f = 900 MHz
(5)
f = 1800 MHz
Fig 12.
Insertion power gain as
a function of collector
current; typical values
Fig
13.
Maximum powe
r gain as a fun
ction of coll
ector
current; typical valu
es
DDD
,
&
P$
_V
_V
_
_V
_
G%
G%
G%
DDD
,
&
P$
*
SPD[
SPD[
*
SPD[
G%
G%
G%
BFU520XR
All information pr
ovided in this d
ocument is subje
ct to legal discl
aimers.
© NXP Semiconduc
tors N.V
. 2014. All rights re
serv
ed.
Product data sheet
Rev
. 1
— 5 March 2014
1
1 of 22
NXP Semiconductors
BFU520XR
NPN wideband silicon RF transistor
I
C
=1
0m
A
;
T
amb
=2
5
C.
(1)
f = 300 MHz
(2)
f = 433 MHz
(3)
f = 800 MHz
(4)
f = 900 MHz
(5)
f = 1800 MHz
I
C
=1
0m
A
;
T
amb
=2
5
C.
If K >1 then G
p(max)
= maximum power gain. If K < 1 then
G
p(max)
= MSG
.
(1)
f = 300 MHz
(2)
f = 433 MHz
(3)
f = 800 MHz
(4)
f = 900 MHz
(5)
f = 1800 MHz
Fig 14.
Insertion power gain as
a function of
collector
-emitter volt
ag
e; typical value
s
Fig 15.
Maximum po
wer gain as a functio
n of
collector-emitter voltage; typical values
DDD
9
&(
9
_V
_V
_
_V
_
G%
G%
G%
DDD
9
&(
9
*
SPD[
SPD[
*
SPD[
G%
G%
G%
BFU520XR
All information pr
ovided in this d
ocument is subje
ct to legal discl
aimers.
© NXP Semiconduc
tors N.V
. 2014. All rights re
serv
ed.
Product data sheet
Rev
. 1
— 5 March 2014
12 of 22
NXP Semiconductors
BFU520XR
NPN wideband silicon RF transistor
V
CE
= 8 V
; 40 MHz
f
3 GHz.
(1)
I
C
=5
m
A
(2)
I
C
= 10 mA
Fig 16.
Input reflection coefficient (s
11
); typical values
V
CE
= 8 V
; 40 MHz
f
3 GHz.
(1)
I
C
=5
m
A
(2)
I
C
= 10 mA
Fig 17.
Output reflection coefficient (s
22
); typical values
DDD
DDD
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P22
BFU520XRR
Mfr. #:
Buy BFU520XRR
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN wideband silicon RF transistor
Lifecycle:
New from this manufacturer.
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