RJH1CM5DPQ-E0#T2 Datasheet RJH1CM5DPQ-E0#T2 | P1-P3

R07DS0520EJ0800 Rev.8.00 Page 1 of 9

Oct 02, 2014

Preliminary Datasheet

RJH1CM5DPQ-E0

1200V - 15A - IGBT

Application: Inverter

Features

• Short circuit withstand time (10 μs typ.)

• Low collector to emitter saturation voltage

V

CE(sat)

= 2.1 V typ. (at I

C

= 15 A, V

GE

= 15 V, Ta = 25°C)

• Built-in fast recovery diode (t

rr

= 200 ns typ.) in one package

• Trench gate and thin wafer technology

• High speed switching

t

f

= 125 ns typ. (at V

CC

= 600 V, V

GE

= 15 V, I

C

= 15 A, Rg = 5 Ω, Ta = 25°C, inductive load)

Outline

1. Gate

2. Collecto

r

3. Emitter

4. Collecto

r

C

G

E

1

2

3

4

RENESAS Package code:

PRSS0003ZE-A

(Package name:

TO-247)

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage / diode reverse voltage V

CES

/ V

R

1200 V

Gate to emitter voltage V

GES

±30 V

Collector current Tc = 25°C I

C

30 A

Tc = 100°C I

C

15 A

Collector peak current I

C

(peak)

Note1

45 A

Collector to emitter diode forward current I

DF

15 A

Collector to emitter diode forward peak current I

DF

(peak)

Note1

45 A

Collector dissipation P

C

Note2

245 W

Junction to case thermal resistance (IGBT) θj-c

Note2

0.51 °C/W

Junction to case thermal resistance (Diode) θj-cd

Note2

0.69 °C/W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Value at Tc = 25°C

R07DS0520EJ0800

Rev.8.00

Oct 02, 2014

RJH1CM5DPQ-E0 Preliminary

R07DS0520EJ0800 Rev.8.00 Page 2 of 9

Oct 02, 2014

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Zero gate voltage collector current

/ Diode reverse current

I

CES

/I

R

— — 100 μA V

CE

= 1200 V, V

GE

= 0

Gate to emitter leak current I

GES

— — ±1 μA V

GE

= ±30 V, V

CE

= 0

Gate to emitter cutoff voltage V

GE(off)

4.5 — 6.5 V V

CE

= 10 V, I

C

= 1 mA

Collector to emitter saturation voltage V

CE(sat)

— 2.1 2.7 V I

C

= 15 A, V

GE

= 15 V

Note3

V

CE(sat)

— 2.9 — V I

C

= 30 A, V

GE

= 15 V

Note3

Input capacitance Cies — 1150 — pF

V

CE

= 25 V

V

GE

= 0

f = 1 MHz

Output capacitance Coes — 70 — pF

Reveres transfer capacitance Cres — 30 — pF

Total gate charge Qg — 74 — nC

V

GE

= 15 V

V

CE

= 300 V

I

C

= 15 A

Gate to emitter charge Qge — 10 — nC

Gate to collector charge Qgc — 40 — nC

Turn-on delay time t

d(on)

— 40 — ns

V

CC

= 600 V

V

GE

= 15 V

I

C

= 15 A

Rg = 5 Ω

Inductive load

Rise time t

r

— 18 — ns

Turn-off delay time t

d(off)

— 100 — ns

Fall time t

f

— 125 — ns

Turn-on energy E

on

— 1.6 — mJ

Turn-off energy E

off

— 0.7 — mJ

Total switching energy E

total

— 2.3 — mJ

Short circuit withstand time t

sc

— 10 — μs

V

CC

≤ 720 V, V

GE

= 15 V

Tc ≤ 125°C

FRD forward voltage V

F

— 1.6 — V I

F

= 15 A

Note3

FRD reverse recovery time t

rr

— 200 — ns

I

F

= 15 A

di

F

/dt = 100 A/μs

FRD reverse recovery charge Q

rr

— 0.8 — μC

FRD peak reverse recovery current I

rr

— 9.5 — A

Notes: 3. Pulse test.

RJH1CM5DPQ-E0 Preliminary

R07DS0520EJ0800 Rev.8.00 Page 3 of 9

Oct 02, 2014

Main Characteristics

40

50

30

20

10

Collector Current I

C

(A)

Case Temperature Tc (°C)

Maximum DC Collector Current vs.

Case Temperature

0255010075 125 150 1750255010075 125 150 175

Collector Dissipation Pc (W)

Case Temperature Tc (°C)

Collector Dissipation vs.

Case Temperature

300

250

200

150

100

50

0

40

30

20

10

0

60

50

30

40

20

10

0

Collector Current I

C

(A)

Collector to Emitter Voltage V

CE

(V)

Maximum Safe Operation Area

Collector Current I

C

(A)

Collector to Emitter Voltage V

CE

(V)

Turn-off SOA

0 400 800 1200 1600

1000

100

1

10

0.1

110010 10000

1000

Tc = 25°C

Single pulse

100 µs

PW = 10 µs

Typical Output Characteristics

40

50

30

20

10

12345

Collector Current I

C

(A)

0

Collector to Emitter Voltage V

CE

(V)

Tc = 25

°

C

Pulse Test

V

GE

= 8 V

15 V

18 V

10 V

12 V

Typical Output Characteristics

12345

Collector Current I

C

(A)

0

Collector to Emitter Voltage V

CE

(V)

Tc = 150

°

C

Pulse Test

V

GE

= 8 V

10 V

12 V

15 V

0

RJH1CM5DPQ-E0#T2

RJH1CM5DPQ-E0#T2

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