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DMN5L06TK-7

P1-P3P4-P6
DMN5L06TK
Document number: DS30926 Rev. 5 - 2
1 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMN5L06TK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• ESD Protected Up To 2kV
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT523
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN5L06TK-7 SOT523 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012
Code T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
e3
DAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
SOT523
G
S
D
TOP VIEW
ESD PROTECTED, 2kV
Source
Gate
Protection
Diode
Gate
Drai
n
E
q
uivalent Circuit
DAB
YM
To
p
View
Green
DMN5L06TK
Document number: DS30926 Rev. 5 - 2
2 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMN5L06TK
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain Source Voltage
V
DSS
50 V
Gate-Source Voltage
V
GSS
±20
V
Drain Current (Note 5) Continuous
I
D
280 mA
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
150 mW
Thermal Resistance, Junction to Ambient
R
θ
JA
833
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
50
⎯ ⎯
V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current @ T
C
= +25°C I
DSS
⎯ ⎯
60 nA
V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯ ⎯
1
500
50
μA
nA
nA
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
0.49
⎯
1.2 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
⎯
1.8
1.5
1.2
3.0
2.5
2.0
Ω
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 5.0V, I
D
= 50mA
On-State Drain Current
I
D
(
ON
)
0.5 1.4
⎯
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
|Y
fs
|
200
⎯ ⎯
mS
V
DS
=10V, I
D
= 0.2A
Source-Drain Diode Forward Voltage
V
SD
0.5
⎯
1.4 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ ⎯
50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯ ⎯
25 pF
Reverse Transfer Capacitance
C
rss
⎯ ⎯
5.0 pF
Notes: 5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
DMN5L06TK
Document number: DS30926 Rev. 5 - 2
3 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMN5L06TK
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
T , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
ch
0
-50
-25
0
25
50
75
100
125
150
0
I DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
D
,
1
10
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
Ω
1
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
D
10
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
Ω
V GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS,
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
Ω
P1-P3P4-P6

DMN5L06TK-7

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Buy DMN5L06TK-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET .15W 50V .28A
Lifecycle:
New from this manufacturer.
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