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SI6410DQ-T1-GE3

P1-P3P4-P5
Vishay Siliconix
Si6410DQ
Document Number: 70661
S-80682-Rev. D, 31-Mar-08
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free
• TrenchFET
®
Power MOSFETs
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
30
0.014 at V
GS
= 10 V
± 7.8
0.021 at V
GS
= 4.5 V
± 6.3
Si6410DQ
D
S
S
G
1
2
3
4
8
7
6
5
D
S
S
D
TSSOP-8
Top View
Ordering Information: Si6410DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S*
N-Channel MOSFET
* Source Pins 2, 3, 6 and 7
must be tied common.
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
± 7.8
A
T
A
= 70 °C
± 6.2
Pulsed Drain Current
I
DM
± 30
Continuous Source Current (Diode Conduction)
a
I
S
1.5
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
1.5
W
T
A
= 70 °C
1.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient
a
R
thJA
83 °C/W
RoHS
COMPLIANT
www.vishay.com
2
Document Number: 70661
S-80682-Rev. D, 31-Mar-08
Vishay Siliconix
Si6410DQ
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
25
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 7.8 A
0.011 0.014
Ω
V
GS
= 4.5 V, I
D
= 5 A
0.015 0.021
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 7.8 A
27 S
Diode Forward Voltage
a
V
SD
I
S
= 1.5 A, V
GS
= 0 V
0.7 1.1 V
Dynamic
b
Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 5 V, I
D
= 7.8 A
22 33
nC
Total Gate Charge
Q
gt
V
DS
= 15 V, V
GS
= 10 V, I
D
= 7.8 A
43 60
Gate-Source Charge
Q
gs
9.0
Gate-Drain Charge
Q
gd
7.0
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
G
= 6 Ω
15 30
ns
Rise Time
t
r
10 20
Turn-Off Delay Time
t
d(off)
70 120
Fall Time
t
f
20 50
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.5 A, di/dt = 100 A/µs
50 80
Document Number: 70661
S-80682-Rev. D, 31-Mar-08
www.vishay.com
3
Vishay Siliconix
Si6410DQ
TYPICAL CHARACTERISTICS 25 °C unless noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
6
12
18
24
30
0246810
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 10 V thru 4 V
3 V
0
0.006
0.012
0.018
0.024
0.030
0 5 10 15 20 25 30
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
0
2
4
6
8
10
0 9 18 27 36 45
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 15 V
I
D
= 7.8 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
6
12
18
24
30
01234
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 125°C
25 °C
- 55 °C
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
C
oss
C
iss
0
700
1400
2100
2800
3500
4200
0 5 10 15 20 25 30
0
0.4
0.8
1.2
1.6
2.0
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 7.8 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
P1-P3P4-P5

SI6410DQ-T1-GE3

Mfr. #:
Buy SI6410DQ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI3410DV-GE3
Lifecycle:
New from this manufacturer.
Delivery:
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