OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

2PA1774SMB,315

P1-P3P4-P6P7-P9P10-P12P13-P13
2PA1774XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 23 March 2012 3 of 12
NXP Semiconductors
2PA1774xMB series
40 V, 100 mA PNP general-purpose transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, mounting pad for collector 1 cm
2
.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 40 V
V
EBO
emitter-base voltage open collector - 5V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse;
t
p
1ms
- 200 mA
I
BM
peak base current single pulse;
t
p
1ms
- 100 mA
P
tot
total power dissipation T
amb
25 C
[1][2]
-250mW
[3][2]
-590mW
T
j
junction temperature - 150 C
T
amb
ambient temperature 55 +150 C
T
stg
storage temperature 65 +150 C
2PA1774XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 23 March 2012 4 of 12
NXP Semiconductors
2PA1774xMB series
40 V, 100 mA PNP general-purpose transistors
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, mounting pad for collector 1 cm
2
.
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1][2]
- - 500 K/W
[3][2]
- - 212 K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2PA1774XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 23 March 2012 5 of 12
NXP Semiconductors
2PA1774xMB series
40 V, 100 mA PNP general-purpose transistors
7. Characteristics
[1] Pulse test: t
p
300 s; 0.02.
Table 8. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
V
CB
= 30 V; I
E
=0A - - 100 nA
V
CB
= 30 V; I
E
=0A;
T
j
= 150 C
--5 A
I
EBO
emitter-base
cut-off current
V
EB
= 4V; I
C
=0A - - 100 nA
h
FE
DC current gain V
CE
= 6V; I
C
= 1mA
2PA1774QMB 120 - 270
2PA1774RMB 180 - 390
2PA1774SMB 270 - 560
V
CEsat
collector-emitter
saturation voltage
I
C
= 50 mA; I
B
= 5mA
[1]
--200 mV
f
T
transition frequency V
CE
= 12 V; I
C
= 2mA;
f = 100 MHz
100 - - MHz
C
c
collector capacitance V
CB
= 12 V; I
E
=i
e
=0A;
f=1MHz
--2.2pF
P1-P3P4-P6P7-P9P10-P12P13-P13

2PA1774SMB,315

Mfr. #:
Buy 2PA1774SMB,315
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 40V 100mA PNP General Purpose Tran
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet