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BF393ZL1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1 Publication Order Number:
BF393/D
BF393
High Voltage Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
300 Vdc
Collector−Base Voltage V
CBO
300 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
500 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above = 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
BF393 TO−92 5000 Units / Box
BF393 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
BF393G TO−92
(Pb−Free)
5000 Units / Box
(Note: Microdot may be in either location)
http://onsemi.com
TO−92
CASE 29−11
STYLE 1
1
2
3
BF
393
AYWW G
G
COLLECTOR
3
2
BASE
1
EMITTER
BF393ZL1 TO−92 2000 / Tape & Reel
BF393ZL1G TO−92
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BF393
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
=0)
V
(BR)CEO
300 −
Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0)
V
(BR)CBO
300 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 100 mAdc, I
C
= 0)
V
(BR)EBO
6.0 −
Vdc
Collector Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0)
I
CBO
− 0.1
mAdc
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0)
I
EBO
− 0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
h
FE
25
40
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
V
CE(sat)
− 2.0
Vdc
Base−Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
V
BE(sat)
− 2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 20 MHz)
f
T
50 −
MHz
Common Emitter Feedback Capacitance
(V
CB
= 60 Vdc, I
E
= 0, f = 1.0 MHz)
C
re
− 2.0
pF
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
BF393
http://onsemi.com
3
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
200
1.0 2.0 3.0 5.0 7.0
10 20 30 50 70
100
50
30
20
h
FE
, DC CURRENT GAIN
T
J
= +125°C
25°C
−55°C
V
CE
= 10 Vdc
100
C, CAPACITANCE (pF)
Figure 2. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
0.2
100
50
20
1.0
C
cb
10
2.0
5.0
0.5 1.0 2.0 5.0 10
20 50 100 200
C
eb
Figure 3. Current−Gain — Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
10070503020107.05.03.02.0
100
70
50
30
20
10
T
J
= 25°C
V
CE
= 20 V
f = 20 MHz
f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)
T
1.0
I
C
, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
V, VOLTAGE (VOLTS)
1.4
0
T
J
= 25°C
V
BE(on)
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ I
C
/I
B
= 10
1.2
1.0
0.8
0.6
0.4
0.2
10070503020107.05.03.02.01.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
MPSA43
Figure 5. Maximum Forward Bias
Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ T
C
= 25°C)
SECOND BREAKDOWN LIMIT
MPSA42
100 ms
1.0 ms
T
C
= 25°C
T
A
= 25°C
CURVES APPLY
BELOW RATED V
CEO
500
0.5
1.0
2.0
5.0
10
20
50
100
200
1005020105.02.01.00.5 200 500
10 ms
100 ms
P1-P3P4-P4

BF393ZL1G

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Buy BF393ZL1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 300V NPN
Lifecycle:
New from this manufacturer.
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