IRF7530PbF
2 www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.2 V T
J
= 25°C, I
S
= 1.3A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 19 29 ns T
J
= 25°C, I
F
= 1.3A
Q
rr
Reverse RecoveryCharge ––– 13 20 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
40
1.3
A
When mounted on 1 inch square copper board, t<10 sec
S
D
G
Starting T
J
= 25°C, L = 2.6mH
R
G
= 25Ω, I
AS
= 5.0A. (See Figure 10)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V V
GS
= 0V, I
D
= 250uA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.030 V
GS
= 4.5V, I
D
= 5.4A
––– ––– 0.045 V
GS
= 2.5V, I
D
= 4.6A
V
GS(th)
Gate Threshold Voltage 0.60 ––– 1.2 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 13 ––– ––– S V
DS
= 10V, I
D
= 5.4A
––– ––– 1.0 V
DS
= 16V, V
GS
= 0V
––– ––– 25 V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 12V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -12V
Q
g
Total Gate Charge ––– 18 26 I
D
= 5.4A
Q
gs
Gate-to-Source Charge ––– 3.4 5.1 nC V
DS
= 16V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 3.4 5.1 V
GS
= 4.5V
t
d(on)
Turn-On Delay Time ––– 8.5 ––– V
DD
= 10V
t
r
Rise Time ––– 11 ––– I
D
= 1.0A
t
d(off)
Turn-Off Delay Time ––– 36 ––– R
G
= 6.0Ω
t
f
Fall Time ––– 16 ––– R
D
= 10Ω
C
iss
Input Capacitance ––– 1310 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 180 ––– pF V
DS
= 15V
C
rss
Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
Ω
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Pulse width ≤ 400µs; duty cycle ≤ 2%.
