SiR472ADP
www.vishay.com
Vishay Siliconix
S14-0133-Rev. B, 27-Jan-14
1
Document Number: 62880
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 30 V (D-S) MOSFET
Ordering Information:
SiR472ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET
®
Gen IV power MOSFET
• 100 % R
g
and UIS tested
• Optimized for high-side switching in
synchronous buck converters
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
•DC/DC conversion
• Battery protection
• Load switching
• DC/AC inverters
Notes
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. Package limited.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() MAX. I
D
(A)
a, g
Q
g
(TYP.)
30
0.0090 at V
GS
= 10 V 18
9 nC
0.0115 at V
GS
= 4.5 V 18
PowerPAK
®
SO-8 Single
Top View
1
6.15 mm
5.15 mm
Bottom View
4
G
3
S
2
S
1
S
D
8
D
6
D
7
D
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
18
g
A
T
C
= 70 °C 18
g
T
A
= 25 °C 14.2
b, c
T
A
= 70 °C 11.3
b, c
Pulsed Drain Current (t = 300 μs) I
DM
80
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
13.3
g
T
A
= 25 °C 3
b,c
Single Pulse Avalanche Current
L = 0.3 mH
I
AS
8.2
Single Pulse Avalanche Energy E
AS
10 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
14.7
W
T
C
= 70 °C 9.4
T
A
= 25 °C 3.3
b, c
T
A
= 70 °C 2.1
b, c
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
b, f
t 10 s R
thJA
30 37
°C/W
Maximum Junction-to-Case (Drain) Steady State R
thJC
78.5