NTD3808N-1G

© Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1 Publication Order Number:
NTD3808N/D
NTD3808N
Power MOSFET
16 V, 76 A, Single N-Channel, DPAK/IPAK
Features
Trench Technology
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
Applications
DC-DC Converters
Low Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain-to-Source Voltage V
DSS
16 V
Gate-to-Source Voltage V
GS
±16 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
17
A
T
A
= 85°C 13
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.6 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
12
A
T
A
= 85°C 9.1
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
1.3 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
76
A
T
C
= 85°C 59
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
52 W
Pulsed Drain Current
t
p
=10ms
T
A
= 25°C I
DM
152 A
Current Limited by Package T
A
= 25°C I
DmaxPkg
35 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
-55 to
+175
°C
Source Current (Body Diode) I
S
51 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain-to-Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 14 A
pk
, L = 0.3 mH, R
G
= 25 W)
EAS 29.4 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
16 V
5.8 mW @ 10 V
76 A
8.5 mW @ 4.5 V
G
S
N-CHANNEL MOSFET
D
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
YWW
38
08NG
1
Gate
2
Drain
3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
YWW
38
08NG
YWW
38
08NG
Y = Year
WW = Work Week
3808N = Device Code
G = Pb-Free Package
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
CASE 369D
IPAK
(Straight Lead
DPAK)
1
2
3
4
1
2
3
4
CASE 369AC
3 IPAK
(Straight Lead)
1
2
3
4
NTD3808N
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction-to-Case (Drain)
R
q
JC
2.9
°C/W
Junction-to-TAB (Drain)
R
q
JC-TAB
3.5
Junction-to-Ambient – Steady State (Note 1)
R
q
JA
57
Junction-to-Ambient – Steady State (Note 2)
R
q
JA
120
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
16 V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
16.9
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 16 V
T
J
= 25°C 1.0
mA
T
J
= 125°C 10
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±16 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5 2.5 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
5.8
mV/°C
Drain-to-Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 15 A 4.8 5.8
mW
V
GS
= 4.5 V I
D
= 15 A 6.7 8.5
Forward Transconductance g
FS
V
DS
= 1.5 V, I
D
= 15 A 42 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 12 V
1660
pF
Output Capacitance C
OSS
560
Reverse Transfer Capacitance C
RSS
315
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 12 V, I
D
= 15 A
14.1 21
nC
Threshold Gate Charge Q
G(TH)
1.5
Gate-to-Source Charge Q
GS
4.8
Gate-to-Drain Charge Q
GD
6.1
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 12 V, I
D
= 15 A 27.8 nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 12 V,
I
D
= 15 A, R
G
= 3.0 W
14
ns
Rise Time t
r
52
Turn-Off Delay Time t
d(OFF)
17
Fall Time t
f
9
Turn-On Delay Time t
d(ON)
V
GS
= 10 V, V
DS
= 12 V,
I
D
= 15 A, R
G
= 3.0 W
10
ns
Rise Time t
r
21
Turn-Off Delay Time t
d(OFF)
29
Fall Time t
f
16
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Assume standoff of 110 mm
NTD3808N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 15 A
T
J
= 25°C 0.84 1.0
V
T
J
= 125°C 0.71
Reverse Recovery Time t
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 15 A
21
ns
Charge Time t
a
9.9
Discharge Time t
b
11.1
Reverse Recovery Charge Q
RR
8.8 nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25°C
2.49
nH
Drain Inductance, DPAK L
D
0.0164
Drain Inductance, IPAK (Note 5) L
D
1.88
Gate Inductance L
G
3.46
Gate Resistance R
G
1.0
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Assume standoff of 110 mm
ORDERING INFORMATION
Device Package Shipping
NTD3808NT4G DPAK
(Pb-Free)
2500 / Tape & Reel
NTD3808N-1G IPAK
(Pb-Free)
75 Units / Rail
NTD3808N-35G IPAK Trimmed Lead
(3.5 " 0.15 mm)
(Pb-Free)
75 Units / Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

NTD3808N-1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 16V 12A IPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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