ZXMN10A07FTA

ZXMN10A07F
Document number: DS33564 Rev. 6 - 2
1 of 7
www.diodes.com
August 2012
© Diodes Incorporated
ZXMN10A07F
A
Product Line o
f
Diodes Incorporated
100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE
Product Summary
BV
DSS
R
DS(ON) Max
I
D
T
A
= +25°C
(Note 6)
100V
700mΩ @ V
GS
= 10V
0.76A
900mΩ @ V
GS
= 6V
0.67A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Motor Control
Disconnect switches
Features
Low On-Resistance
Low Threshold
Fast Switching Speed
Low Gate Drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMN10A07FTA 7N1 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
Top View
SOT23
Device Symbol
Top View
Pin-Out
D
S
G
D
S
G
7N1 = Product Type Marking Code
ZXMN10A07F
Document number: DS33564 Rev. 6 - 2
2 of 7
www.diodes.com
August 2012
© Diodes Incorporated
ZXMN10A07F
A
Product Line o
f
Diodes Incorporated
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
100 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current
Steady
State
@ V
GS
= 10V; T
A
= +25°C (Note 6)
@ V
GS
= 10V; T
A
= +70°C (Note 6)
@ V
GS
= 10V; T
A
= +100°C (Note 6)
@ V
GS
= 10V; T
A
= +25°C (Note 5)
I
D
0.8
0.6
0.5
0.7
A
Pulsed Drain Current (Note 7)
I
DM
3.5 A
Continuous Source Current (Body Diode) (Note 6)
I
S
0.5 A
Pulsed Source Current (Body Diode) (Note 7)
I
SM
3.5 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
625 mW
Power Dissipation (Note 6)
P
D
806 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
200 °C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
155 °C/W
Thermal Resistance, Junction to Leads (Note 8)
R
JL
194 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t 10 sec.
7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s – pulse width limited by maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
Thermal Characteristics
110100
1m
10m
100m
1
Single Pulse
T
amb
=25°C
R
DS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
T
amb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
ZXMN10A07F
Document number: DS33564 Rev. 6 - 2
3 of 7
www.diodes.com
August 2012
© Diodes Incorporated
ZXMN10A07F
A
Product Line o
f
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
100 — — V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
1.0 µA
V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS
(
th
)
2 — 4 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance (Note 9)
R
DS (ON)
540 700
m
V
GS
= 10V, I
D
= 1.5A
700 900
V
GS
= 6V, I
D
= 1A
Forward Transconductance (Notes 9 & 11)
g
fs
1.6 — S
V
DS
= 15V, I
D
= 1A
Diodes Forward Voltage (Note 9)
V
SD
0.85 0.95 V
T
J
= +25°C, I
S
= 1.5A, V
GS
= 0V
DYNAMIC CHARACTERISTICS
Input Capacitance (Notes 10 & 11)
C
iss
138 280
pF
V
DS
= 50V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance (Notes 10 & 11)
C
oss
12 25
Reverse Transfer Capacitance (Notes 10 & 11)
C
rss
6 12
Gate Resistance (Notes 10 & 11)
R
g
2 4
f = 1MHz, V
GS
= 0V, V
DS
= 0V
Total Gate Charge (Notes 10 & 11)
Q
g
2.9 6
nC
V
GS
= 10V, V
DS
= 50V,
I
D
= 1A
Gate-Source Charge (Notes 10 & 11)
Q
g
s
0.7 1.5
Gate-Drain Charge (Notes 10 & 11)
Q
g
d
1 2
Reverse Recovery Time (Note 11)
t
r
r
27 60 ns
T
J
= +25°C, I
F
= 1.8A,
di/dt = 100A/µs
Reverse Recovery Charge (Note 11)
Q
r
r
12 — nC
Turn-On Delay Time (Notes 10 & 11)
t
D
(
on
)
1.8 —
ns
V
GS
= 10V, V
DD
= 50V,
R
G
= 6 , I
D
= 1A
Turn-On Rise Time (Notes 10 & 11)
t
1.5 —
Turn-Off Delay Time (Notes 10 & 11)
t
D
(
off
)
4.1 —
Turn-Off Fall Time (Notes 10 & 11)
t
f
2.1 —
Notes: 9. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.

ZXMN10A07FTA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET 100V N-Chnl UMOS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet