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ZXMN10A07FTC

P1-P3P4-P6P7-P7
ZXMN10A07F
Document number: DS33564 Rev. 6 - 2
4 of 7
www.diodes.com
August 2012
© Diodes Incorporated
ZXMN10A07F
A
Product Line o
f
Diodes Incorporated
Typical Characteristics
0.1 1 10
0.01
0.1
1
0.1 1 10
0.01
0.1
1
3456
0.01
0.1
1
-50 0 50 100 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01 0.1 1
1
10
0.4 0.6 0.8 1.0 1.2
0.1
1
10
6V
7V
10V
5V
4V
Output Characteristics
T = 25°C
4.5V
V
GS
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
10V
7V
6V
4.5V
5V
3.5V
Output Characteristics
T = 150°C
V
GS
4V
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
Typical Transfer Characteristics
V
DS
= 10V
T = 25°C
T = 150°C
I
D
Drain Current (A)
V
GS
Gate-Source Voltage (V)
Normalised Curves v Temperature
R
DS(on)
V
GS
= 10V
I
D
= 1.5A
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
Normalised R
DS(on)
and V
GS(th)
Tj Junction Temperature (°C)
7V
6V
10V
5V
4.5V
On-Resistance v Drain Current
T = 25°C
V
GS
R
DS(on)
Drain-Source On-Resistance (Ω)
I
D
Drain Current (A)
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
V
SD
Source-Drain Voltage (V)
I
SD
Reverse Drain Current (A)
ZXMN10A07F
Document number: DS33564 Rev. 6 - 2
5 of 7
www.diodes.com
August 2012
© Diodes Incorporated
ZXMN10A07F
A
Product Line o
f
Diodes Incorporated
Typical Characteristics (cont.)
110100
0
20
40
60
80
100
120
140
160
180
200
C
RSS
C
OSS
C
ISS
V
GS
= 0V
f = 1MHz
C Capacitance (pF)
V
DS
- Drain - Source Voltage (V)
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
2
4
6
8
10
I
D
= 1.0A
V
DS
= 50V
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Q - Charge (nC)
V
GS
Gate-Source Voltage (V)
Test Circuits
ZXMN10A07F
Document number: DS33564 Rev. 6 - 2
6 of 7
www.diodes.com
August 2012
© Diodes Incorporated
ZXMN10A07F
A
Product Line o
f
Diodes Incorporated
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α
0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C
2.0
E
1.35
A
M
J
L
D
F
B
C
H
K
G
K1
X
E
Y
C
Z
P1-P3P4-P6P7-P7

ZXMN10A07FTC

Mfr. #:
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Manufacturer:
Diodes Incorporated
Description:
MOSFET 100V N-Chnl UMOS
Lifecycle:
New from this manufacturer.
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