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IXTK110N20L2

P1-P3P4-P5
© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 200 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 200 V
V
GSS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 110 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
275 A
I
A
T
C
= 25°C55 A
E
AS
T
C
= 25°C5 J
P
D
T
C
= 25°C 960 W
T
J
-55...+150 °C
T
JM
150 °C
T
stg
-55...+150 °C
T
L
1.6mm (0.063 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (IXTK) 1.13/10 Nm/lb.in.
F
C
Mounting Force (IXTX) 20..120 / 4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 200 V
V
GS(th)
V
DS
= V
GS
, I
D
= 3mA 2.0 4.5 V
I
GSS
V
GS
= ±20V, V
DS
= 0V ±200 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 50 μA
T
J
= 125°C 2.5 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 24 mΩ
LinearL2
TM
Power
MOSFET w/Extended
FBSOA
IXTK110N20L2
IXTX110N20L2
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
V
DSS
= 200V
I
D25
= 110A
R
DS(on)
< 24m
ΩΩ
ΩΩ
Ω
DS100195(9/09)
G = Gate D = Drain
S = Source TAB = Drain
TO-264 (IXTK)
G
D
S
G
D
S
PLUS247(IXTX)
Advance Technical Information
Features
z
Designed for Linear Operation
z
International Standard Packages
z
Avalanche Rated
z
Guaranteed FBSOA at 75°C
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
Applications
z
Solid State Circuit Breakers
z
Soft Start Controls
z
Linear Amplifiers
z
Programmable Loads
z
Current Regulators
(TAB)
(TAB)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK110N20L2
IXTX110N20L2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-264 (IXTK) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
(IXTX) Outline
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 55 75 95 S
C
iss
23 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 2160 pF
C
rss
320 pF
t
d(on)
40 ns
t
r
100 ns
t
d(off)
33 ns
t
f
135 ns
Q
g(on)
500 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
110 nC
Q
gd
182 nC
R
thJC
0.13 °C/W
R
thCS
0.15 °C/W
Safe-Operating-Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA V
DS
= 200V, I
D
= 2.88A, T
C
= 75°C, Tp = 5s 575 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 110 A
I
SM
Repetitive, Pulse Width Limited by T
JM
440 A
V
SD
I
F
= 55A, V
GS
= 0V, Note 1 1.35 V
t
rr
420 ns
I
RM
39 A
Q
RM
8.3 μC
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1Ω (External)
I
F
= 55A, -di/dt = 100A/μs,
V
R
=
100V, V
GS
= 0V
© 2009 IXYS CORPORATION, All Rights Reserved
IXTK110N20L2
IXTX110N20L2
Fig. 1. Output Characteristics
@ T
J
= 25ºC
0
20
40
60
80
100
120
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
14V
12V
10V
8V
4
V
6
V
6.5
V
5
V
Fig. 2. Extended Output Characteristics
@ T
J
= 25ºC
0
40
80
120
160
200
240
280
0 2 4 6 8 10 12 14 16 18 20
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
14V
12V
10V
4
V
6
V
8
V
6.5
V
5
V
Fig. 3. Output Characteristics
@ T
J
= 125ºC
0
20
40
60
80
100
120
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
12V
10V
4
V
6V
8V
5
V
Fig. 4. R
DS(on)
Normalized to I
D
= 55A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 110A
I
D
= 55A
Fig. 5. R
DS(on)
Normalized to I
D
= 55A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 20 40 60 80 100 120 140 160 180 200 220 240 260
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
20
40
60
80
100
120
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P5

IXTK110N20L2

Mfr. #:
Buy IXTK110N20L2
Manufacturer:
Littelfuse
Description:
MOSFET LINEAR L2 SERIES MOSFET 200V 110A
Lifecycle:
New from this manufacturer.
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