IRL2203NS/LPbF
2 www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 0.16mH R
G
= 25Ω,
I
AS
= 60A, V
GS
=10V (See Figure 12)
I
SD
≤ 60A, di/dt ≤ 110A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
R
θ
is measured at T
J
approximately 90°C
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min Typ Max Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆
V
(BR)DSS
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
––– ––– 7.0
––– ––– 10
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V
fs
Forward Transconductance 73 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 25
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
Q
g
Total Gate Charge ––– ––– 60
Q
gs
Gate-to-Source Charge ––– ––– 14
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 33
R
G
Gate Resistance 0.2 ––– 3.0
Ω
t
d(on)
Turn-On Delay Time ––– 11 –––
t
r
Rise Time ––– 160 –––
t
d(off)
Turn-Off Delay Time ––– 23 –––
t
f
Fall Time ––– 66 –––
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 3290 –––
C
oss
Output Capacitance ––– 1270 –––
C
rss
Reverse Transfer Capacitance ––– 170 –––
E
AS
Sin
le Pulse Avalanche Ener
y
–––
1320
290
mJ
Source-Drain Ratings and Characteristics
Symbol Parameter Min Typ Max Units
I
S
Continuous Source Current
(Body Diode) A
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 56 84 ns
Q
rr
Reverse Recovery Charge ––– 110 170 nC
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
di/dt = 100A/µs
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
I
AS
= 60A, L = 0.16mH
V
GS
= 4.5V, See Fig. 6 and 13
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 60A, V
GS
= 0V
T
J
= 25°C, I
F
= 60A
V
GS
= 16V
V
GS
= -16V
MOSFET symbol
showing the
V
DD
= 15V
I
D
= 60A
R
G
= 1.8
Ω
I
D
= 60A
V
DS
= 24V
Conditions
V
GS
= 4.5V, See Fig. 10
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
µA
V
DS
= 25V, I
D
= 60A
V
GS
= 10V, I
D
= 60A
V
GS
= 4.5V, I
D
= 48A
––– 116
nA
nC
Nh
pF
––– ––– 400
Internal Drain Inductance
Internal Source Inductance
4.5 –––
7.5 –––
–––
L
D
L
S
–––
–––
