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STG3820BJR
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P20
DocID15992 Rev 4
7/20
STG3820
Electrical charac
teristics
20
4 Electrical
characteristics
T
able 6. DC spec
ifications
Symbol
Parameter
V
CC
(V)
T
est
conditions
Va
l
u
e
Unit
T
A
= 25 °C
-40 to 85 °C
Min.
T
yp.
Max.
Min.
Max.
V
IH
High level input
voltage
1.65 – 1.95
0.65
V
CC
0.65
V
CC
V
2.3 – 2.5
1.2
1.2
2.7 – 3.0
1.3
1.3
3.3 – 3.6
1.4
1.4
4.3
1.6
1.6
V
IL
Low level input
voltage
1.65 – 1.95
0.25
0.25
V
2.3 – 2.5
0.25
0.25
2.7 – 3.0
0.25
0.25
3.3 – 3.6
0.30
0.30
4.3
0.40
0.40
R
PEAK
Switch ON peak
resistance
1.8
V
S
= 0
V to V
CC
I
S
= 8 mA
17.0
19.6
Ω
2.7
7.5
8.7
3.0
6.6
7.6
3.7
5.8
6.7
4.3
5.4
6.2
R
ON
Switch ON
resistance
3.0
V
S
= 3 V
I
S
= 8 mA
5.1
5.8
Ω
3.0
V
S
= 0.4 V
I
S
= 8 mA
6.3
7.3
R
ON
ON resistance
match betw
een
channels
(1)
1.8
V
S
at R
ON
MAX
I
S
= 8 mA
Ω
2.7
3.0
0.3
3.7
4.3
Electrical charact
eristics
STG3820
8/20
DocID15992 Rev 4
R
FLA
T
ON resistance
flatness
(2)
1.8
V
S
= 0 V to
0.4 V
I
S
= 8 mA
4.5
Ω
1.8
V
S
= 0
V to V
CC
I
S
= 8 mA
9.5
2.7
2.2
3.0
1.8
3.7
1.6
4.3
1.6
I
OFF
OFF st
ate
leakage current
(Sn), (D
)
4.3
V
S
= 0.3 or 4 V
-20
20
-100
100
nA
I
IN
Input leakage
current
0 to 4.3
V
SEL
= 0 to
4.3 V
-0.2
0.2
-1.0
1.0
µA
I
CC
Quiescent supply
current
1.65 to 4.3
V
SEL
= V
CC
or
GND
-0.2
0.2
-1.0
1.0
µA
I
CCL
V
Quiescent supply
current for low
voltage driving
(3)
4.3
V
SEL
= 1.65 V
±37
±50
±100
µA
V
SEL
= 1.80 V
±33
±40
±50
V
SEL
= 2.60 V
±1
1
±20
±30
1.
R
ON
= max. |mSN - nSN|, where m = 1 to 8 and n = 1 to 8, N = 1, 2.
2.
Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the
specified analog signal ranges.
3.
Measurement is for one SEL pin.
T
able 6. D
C specifications (continued)
Symbol
Parameter
V
CC
(V)
T
est
conditions
Va
l
u
e
Unit
T
A
= 25 °C
-40 to 85 °C
Min.
T
yp.
Max.
Min.
Max.
DocID15992 Rev 4
9/20
STG3820
Electrical charac
teristics
20
T
able 7. AC electrical characte
ristics (C
L
= 35 pF
, R
L
= 50
Ω
, t
r
= t
f
5n
s
)
Symbol
Parameter
V
CC
(V)
Te
s
t
conditions
Va
l
u
e
Unit
T
A
= 25 °C
-40 to 85 °C
Min.
T
yp.
Max.
Min.
Max.
t
PLH,
t
PHL
Propag
ation
delay
1.65 - 1.95
0.21
ns
2.3 - 2.7
0.15
3.0 - 3.3
0.14
3.6 - 4.3
0.13
t
ON
T
urn-on time
1.65 - 1.95
V
S
= 0.8 V
36
ns
2.3 - 2.7
V
S
= 1.5 V
20
23
26
3.0 - 3.3
15
17
20
3.6 - 4.3
13
15
17
t
OFF
T
urn-off time
1.65 - 1.95
V
S
= 0.8 V
29
ns
2.3 - 2.7
V
S
= 1.5 V
19
22
25
3.0 - 3.3
14
16
18
3.6 - 4.3
11
1
3
14
t
D
Break-before-
make time delay
1.65 - 1.95
C
L
= 35 pF
R
L
= 50
Ω
V
S
= 1.5 V
10
ns
2.3 - 2.7
7
3.0 - 3.3
6
3.6 - 4.3
4
Q
Charge i
njection
1.65
C
L
= 100 pF
V
GEN
= 0 V
R
GEN
= 0
Ω
3.9
pC
2.3
4.8
3.0
5.2
4.3
6.4
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P20
STG3820BJR
Mfr. #:
Buy STG3820BJR
Manufacturer:
STMicroelectronics
Description:
Analog Switch ICs High Speed Quad DPDT C2MOS LV Switch
Lifecycle:
New from this manufacturer.
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STG3820BJR