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DMN2300UFB4-7B

P1-P3P4-P6P7-P7
DMN2300UFB4
Document number: DS35269 Rev. 4 - 2
1 of 7
www.diodes.com
September 2012
© Diodes Incorporated
DMN2300UFB4
A
Product Line o
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Diodes Incorporated
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
(Note 5)
20V
175mΩ @ V
GS
= 4.5V
1.30A
240mΩ @ V
GS
= 2.5V
1.11A
360mΩ @ V
GS
= 1.8V
0.91A
500mΩ @ V
GS
= 1.5V
0.82A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• Load switch
Features
• Footprint of just 0.6mm
2
– thirteen times smaller than SOT23
• 0.4mm profile – ideal for low profile applications
• Low Gate Threshold Voltage
• Fast Switching Speed
• ESD Protected Gate 2KV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X2-DFN1006-3
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN2300UFB4-7B NL 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
e4
X2-DFN1006-3
Equivalent Circuit
Top View
Internal Schematic
Bottom View
D
S
G
ESD PROTECTED TO 2kV
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
NL = Product Type Marking Code
DMN2300UFB4-7B
Top View
Bar Denotes Gate
and Source Side
NL
DMN2300UFB4
Document number: DS35269 Rev. 4 - 2
2 of 7
www.diodes.com
September 2012
© Diodes Incorporated
DMN2300UFB4
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Diodes Incorporated
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
1.30
0.96
A
Pulsed Drain Current (Note 6)
I
DM
6 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
500 mW
Thermal Resistance, Junction to Ambient @T
A
= +25°C R
θJA
250 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1 µA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — 10 µA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
0.45 — 0.95 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
— — 175
mΩ
V
GS
= 4.5V, I
D
= 1A
— — 240
V
GS
= 2.5V, I
D
= 750mA
— — 360
V
GS
= 1.8V, I
D
= 500mA
— — 500
V
GS
= 1.5V, I
D
= 200mA
Forward Transfer Admittance
|Y
fs
|
40 — — mS
V
DS
= 3V, I
D
= 30mA
Diode Forward Voltage
V
SD
— 0.7 1.2 V
V
GS
= 0V, I
S
= 300mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 64.3 — pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 6.1 — pF
Reverse Transfer Capacitance
C
rss
— 4.5 — pF
Gate Resistance
R
g
— 70 — Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
— 1.6 — nC
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 1A
Gate-Source Charge
Q
g
s
— 0.2 — nC
Gate-Drain Charge
Q
g
d
— 0.2 — nC
Turn-On Delay Time
t
D
(
on
)
— 3.5 — ns
V
DS
= 10V, I
D
= 1A
V
GS
= 10V, R
G
= 6Ω
Turn-On Rise Time
t
r
— 2.8 — ns
Turn-Off Delay Time
t
D
(
off
)
— 38 — ns
Turn-Off Fall Time
t
f
— 13 — ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN2300UFB4
Document number: DS35269 Rev. 4 - 2
3 of 7
www.diodes.com
September 2012
© Diodes Incorporated
DMN2300UFB4
A
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Diodes Incorporated
012 345
Figure 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
0.5
1.0
1.5
2.0
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 1.2V
GS
V = 1.5V
GS
V = 1.8V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 4.5V
GS
0
0.5
1.0
1.5
2.0
0 0.5 1.0 1.5 2.0 2.5 3.0
Figure 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0 0.4 0.8 1.2 1.6 2.0
Figure 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
0
0.2
0.4
0.6
0.8
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
V = 1.5V
GS
1.0
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.2 0.4 0.6 0.8 1.0
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.2 0.4 0.6 0.8 1.0
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 1.8V
GS
I , DRAIN CURRENT (A)
D
Figure 6 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.2 0.4 0.6 0.8 1.0
T = -55°C
A
T
=
2
5
°
C
A
T
=
8
5
°
C
A
T
=
1
2
5
°
C
A
T = 150°C
A
V = 1.5V
GS
P1-P3P4-P6P7-P7

DMN2300UFB4-7B

Mfr. #:
Buy DMN2300UFB4-7B
Manufacturer:
Diodes Incorporated
Description:
MOSFET 20V N-Ch ENH Mode 175mOhm 4.5V 1.30A
Lifecycle:
New from this manufacturer.
Delivery:
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