IXFH18N100Q3 Datasheet IXFH18N100Q3, IXFT18N100Q3 | P1-P3

DS100390(10/11)

IXFT18N100Q3

IXFH18N100Q3

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 1000 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 1000 V

V

GSS

Continuous ± 30 V

V

GSM

Transient ± 40 V

I

D25

T

C

= 25°C 18 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

60 A

I

A

T

C

= 25°C18 A

E

AS

T

C

= 25°C 1.5 J

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 150°C 50 V/ns

P

D

T

C

= 25°C 830 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062in.) from Case for 10s 300 °C

T

sold

Plastic Body for 10 seconds 260 °C

M

d

Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in.

Weight TO-268 4.0 g

TO-247 6.0 g

V

DSS

= 1000V

I

D25

= 18A

R

DS(on)

≤≤

≤

660m

ΩΩ

Ω

Advance Technical Information

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 1000 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4mA 3.5 6.5 V

I

GSS

V

GS

= ±30V, V

DS

= 0V ±100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 25 μA

T

J

= 125°C 1.25 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 660 mΩ

HiperFET

TM

Power MOSFETs

Q3-Class

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXFH)

G

S

D (Tab)

D

TO-268 (IXFT)

S

G

D (Tab)

Features

z

Low Intrinsic Gate Resistance

z

International Standard Packages

z

Low Package Inductance

z

Fast Intrinsic Rectifier

z

Low R

DS(on)

and Q

G

Advantages

z

High Power Density

z

Easy to Mount

z

Space Savings

Applications

z

DC-DC Converters

z

Battery Chargers

z

Switch-Mode and Resonant-Mode

Power Supplies

z

DC Choppers

z

Temperature and Lighting Controls

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFT18N100Q3

IXFH18N100Q3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 20V, I

D

= 0.5 • I

D25

, Note 1 9 16 S

C

iss

4890 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 400 pF

C

rss

34 pF

R

Gi

Gate Input Resistance 0.20 Ω

t

d(on)

37 ns

t

r

32 ns

t

d(off)

40 ns

t

f

13 ns

Q

g(on)

90 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

33 nC

Q

gd

37 nC

R

thJC

0.15 °C/W

R

thCS

TO-247 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 18 A

I

SM

Repetitive, Pulse Width Limited by T

JM

72 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.4 V

t

rr

300 ns

I

RM

11.0

A

Q

RM

1.5 μC

I

F

= 9A, -di/dt = 100A/μs

V

R

= 100V, V

GS

= 0V

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 3Ω (External)

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

TO-247 Outline

Terminals: 1 - Gate 2 - Drain

3 - Source

TO-268 Outline

Terminals: 1 - Gate 2,4 - Drain

3 - Source

e

∅ P

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

IXFT18N100Q3

IXFH18N100Q3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

2

4

6

8

10

12

14

16

18

01234567891011

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8

V

7

V

6

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

5

10

15

20

25

30

35

40

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7

V

8

V

6

V

9

V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

2

4

6

8

10

12

14

16

18

0 2 4 6 8 10 12 14 16 18 20 22 24 26

V

DS

- Volts

I

D

- Amperes

6

V

5V

V

GS

= 10V

7

V

Fig. 4. R

DS(on)

Normalized to I

D

= 9A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

-50-250 255075100125150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 18A

I

D

= 9A

Fig. 5. R

DS(on)

Normalized to I

D

= 9A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

0 4 8 12 16 20 24 28 32 36

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

2

4

6

8

10

12

14

16

18

20

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFH18N100Q3

IXFH18N100Q3

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