MMBT5401-7-F Datasheet MMBT5401-7-F, MMBT5401Q-7-F, MMBT5401-7 | P4-P6

MMBT5401

Document number: DS30057 Rev. 10 - 2

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MMBT5401

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 10)

Collector-Base Breakdown Voltage

BV

CBO

-160



V

I

C

= -100μA, I

E

= 0

Collector-Emitter Breakdown Voltage

BV

CEO

-150



V

I

C

= -1.0mA, I

B

= 0

Emitter-Base Breakdown Voltage

BV

EBO

-5.0



V

I

E

= -10μA, I

C

= 0

Collector Cutoff Current

I

CBO



-50

nA

μA

V

CB

= -120V, I

E

= 0

V

CB

= -120V, I

E

= 0, T

A

= +100°C

Emitter Cutoff Current

I

EBO



-50 nA

V

EB

= -4.0V, I

C

= 0

ON CHARACTERISTICS (Note 10)

DC Current Gain

h

FE

50

60

50



240



I

C

= -1.0mA, V

CE

= -5.0V

I

C

= -10mA, V

CE

= -5.0V

I

C

= -50mA, V

CE

= -5.0V

Collector-Emitter Saturation Voltage

V

CE(SAT)



-0.2

-0.5

V

I

C

= -10mA, I

B

= -1.0mA

I

C

= -50mA, I

B

= -5.0mA

Base-Emitter Saturation Voltage

V

BE(SAT)



-1.0 V

I

C

= -10mA, I

B

= -1.0mA

I

C

= -50mA, I

B

= -5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

obo



6.0 pF

V

CB

= -10V, f = 1.0MHz, I

E

= 0

Small Signal Current Gain

h

fe

40 200



V

CE

= -10V, I

C

= -1.0mA,

f = 1.0kHz

Current Gain-Bandwidth Product

f

T

100 300 MHz

V

CE

= -10V, I

C

= -10mA,

f = 100MHz

Noise Figure NF



8.0 dB

V

CE

= -5.0V, I

C

= -200μA,

R

S

= 10Ω

f = 1.0kHz

Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

MMBT5401

Document number: DS30057 Rev. 10 - 2

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MMBT5401

Typical Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

1

10

100

1,000

10,000

1

10 100

1,000

V = 5V

CE

h, D

C

U

R

EN

T

G

AIN

FE

I , COLLECTOR CURRENT (mA)

Fig. 2 Typical DC Current Gain vs. Collector Current

C

T = 25°C

A

T = -50°C

A

T = 150°C

A

0.01

0.1

1.0

10.0

1

10 100

1,000

T = 25°C

A

T = -50°C

A

T = 150°C

A

V , COLLECTOR-EMITTER

SATURATION VOLTAGE (V)

CE(SAT)

I , COLLECTOR CURRENT (mA)

Fig. 3 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

C

I

C

B

= 10

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.1 1.0 10 100

V , BASE-EMI

T

E

R

T

U

R

N

-

O

N

V

O

L

T

A

G

E (V)

BE(ON)

I , COLLECTOR CURRENT (mA)

Fig. 4 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

C

T = 25°C

A

T = -50°C

A

T = 150°C

A

V = 5V

CE

10

100

1,000

1

10

100

f,

G

AIN-BANDWID

T

H

P

R

O

D

U

C

T

(M

H

z)

t

I , COLLECTOR CURRENT (mA)

Fig. 5 Typical Gain-Bandwidth Product vs. Collector Current

C

V = 10V

CE

MMBT5401

Document number: DS30057 Rev. 10 - 2

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December 2013

MMBT5401

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between

device terminals and PCB tracking.

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.890 1.00 0.975

K1 0.903 1.10 1.025

L 0.45 0.61 0.55

L1 0.25 0.55 0.40

M 0.085 0.150 0.110

a



8°

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C 2.0

E 1.35

X

E

Y

C

Z

MMBT5401-7-F

MMBT5401-7-F

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