Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
IRL7833SPBF
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
IRL7833/S/LPbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rai
n-t
o-S
ource Vol
tage (V
)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RT
ED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0.0
0.
5
1.
0
1.5
2.0
2.5
3.0
V
SD
, S
ource-
to-
Drai
n Vol
tage (V
)
0.10
1.00
10.00
100.00
1000.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
V
DS
, D
rai
n-t
o-S
ource Vol
tage (V
)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc =
25°C
Tj
= 175°C
Si
ngl
e Pul
se
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
0
5
10
15
20
25
30
35
40
Q
G
Tot
al
Gate C
harge (
nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
I
D
= 30A
IRL7833/S/LPbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Threshold Voltage Vs. Temperature
25
50
75
100
125
150
175
0
40
80
120
160
I ,
Drain Current
(A)
D
LI
MI
T
ED BY PACKAG
E
T
C
, Case
Temperature
(°C)
-75
-50
-25
0
25
50
75
100
125
150
175
T
J
, T
emperat
ure ( °C
)
0.0
0.5
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
No
t
e
s
:
1. Du
ty factor D =
t / t
2. Peak
T
=
P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rec
tangul
ar Pul
se Dur
ati
on (s
ec)
Therm
al Respons
e
(
Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D =
0.50
SING
LE PULSE
(TH
ERMAL RESPON
SE)
IRL7833/S/LPbF
6
www.irf.com
D.U.T
.
V
D
S
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
T
ype
as
D.U.T
.
Current
Sampling
Resistors
+
-
Fig 13.
Gate Charge Test Circuit
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
25
50
75
100
125
150
175
0
400
800
1200
1600
2000
E , Single Puls
e Avalanche Energy
(mJ)
AS
I
D
TOP
BO
TTO
M
12A
21A
30A
Fig 14a.
Switching Time Test Circuit
Fig 14b.
Switching Time Waveforms
V
GS
V
DS
9
0%
10%
t
d(
o
n)
t
d(off)
t
r
t
f
V
GS
Pu
ls
e Wi
dt
h < 1µs
Duty F
act
or <
0.1
%
V
DD
V
DS
L
D
D.U
.T
+
-
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
IRL7833SPBF
Mfr. #:
Buy IRL7833SPBF
Manufacturer:
Infineon Technologies
Description:
Darlington Transistors MOSFET MOSFT 30V 150A 32nC 3.8mOhm Qg log lvl
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
IRL7833STRLPBF
IRL7833PBF
IRL7833STRRPBF
IRL7833LPBF
IRL7833SPBF