MSKD100_MSAD100_MSCD100 - Rev 1 www.microsemi.com
Dec, 2009 1/4
MSKD100 ; MSAD100 ; MSCD100
Module Type
TYPE VRRM VRSM
MSKD100-08
MSKD100-12
MSKD100-16
MSKD100-18
MSAD100-08
MSAD100-12
MSAD100-16
MSAD100-18
MSCD100-08
MSCD100-12
MSCD100-16
MSCD100-18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol Conditions Values Units
IFAV
Tc=100℃
100 A
IFSM
t=10mS Tv
=45℃
2500 A
i
2
t
t=10mS Tv
=45℃
31250
A
2
s
Visol
a.c.50Hz;r.m.s.;1min 3000 V
Tvj
-40 to 150
℃
Tstg
-40 to 125
℃
Mt To terminals(M5)
2．5-4
Nm
Ms To heatsink(M5)
2．5-4
Nm
Weight Module 110 g
Thermal Characteristics
Symbol Conditions Values Units
Rth
-c
Per diode 0.35 ℃
W
Rth
c-s
Module 0.1 ℃
W
Electrical Characteristics
Circuit
MSKD
1
3
2
MSAD
1
3
2
MSCD
1
3
2
Glass Passivated Rectifier
Diode Modules
V
RRM 800 to 1800V
IFAV 100 Amp
Applications
y Non-controllable rectifiers for AC/AC
converters
y Line rectifiers for transistorized AC motor
controllers
y Field supply for DC motors
Features
y Blocking voltage: 800 to 1800V
y Heat transfer through aluminum oxide ceramic
isolated metal baseplate
y Glass passivated chip
Symbol Conditions Values Units
VFM T=25℃ IFM =300
1.35 V
IRD Tv
=Tv
M VRD=VRRM ≤ 5 mA
