OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

CNY66B

P1-P3P4-P6P7-P9
Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 2.1, 24-Feb-11 1
Optocoupler, Phototransistor Output, Very High Isolation Voltage
CNY64, CNY65, CNY66
Vishay Semiconductors
DESCRIPTION
The CNY64, CNY65, and CNY66 consist of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 4 pin plastic package.
The single components are mounted opposite one another,
providing a distance between input and output for highest
safety requirements of > 3 mm.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
• DIN EN 60747-5-2 (VDE 0884)
Optocoupler for electrical safety requirements
• IEC 60950/EN 60950
Office machines
• VDE 0804
Telecommunication apparatus and data processing
• IEC60065
Safety for mains-operated electronic and related
household apparatus
• VDE 0700/IEC 60335
Household equipment
• VDE 0160
Electronic equipment for electrical power installation
• VDE 0750/IEC60601
Medical equipment
FEATURES
• Rated recurring peak voltage (repetitive)
V
IORM
= 1450 V
peak
• Thickness through insulation 3 mm
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI 200
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I - IV at mains voltage 300 V
• for appl. class I - IV at mains voltage 600 V
• for appl. class I - III at mains voltage 1000 V according
to DIN EN 60747-5-2 (VDE 0884), suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface
AGENCY APPROVALS
• UL1577, file no. E76222 system code H, J, and K
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), available with option 1
• VDE related features:
- rated impulse voltage (transient overvoltage),
V
IOTM
= 12 kV peak
- isolation test voltage (partial discharge test voltage),
V
pd
= 2.8 kV peak
C
E
A
C
Top View
17187-5
V
DE
17187-4
CNY65
CNY66
CNY64
ORDERING INFORMATION
CNY 6 # x
PART NUMBER PACKAGE
OPTION
CTR
BIN
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, VDE 50 to 300 63 to 125 100 to 200
DIP-4 HV, 400 mil, high isolation distance CNY64 CNY64A CNY64B
DIP-4 HV, 600 mil, high isolation distance CNY65 CNY65A CNY65B
DIP-4 HV, 700 mil, high isolation distance CNY66 - CNY66B
DIP, 400 mil DIP, 600 mil DIP, 700 mil
10.16 mm
15.24 mm
17.8 mm
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83540
2 Rev. 2.1, 24-Feb-11
CNY64, CNY65, CNY66
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Very High Isolation Voltage
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
5V
Forward current I
F
75 mA
Forward surge current t
p
10 μs I
FSM
1.5 A
Power dissipation P
diss
120 mW
Junction temperature T
j
100 °C
OUTPUT
Collector emitter voltage V
CEO
32 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
10 ms I
CM
100 mA
Power dissipation P
diss
130 mW
Junction temperature T
j
100 °C
COUPLER
AC isolation test voltage CNY64 t = 1 min V
ISO
8200 V
RMS
DC isolation test voltage CNY65 t = 1 s V
ISO
13.9 kV
DC isolation test voltage CNY66 t = 1 s V
ISO
13.9 kV
Total power dissipation P
tot
250 mW
Ambient temperature range T
amb
- 55 to + 85 °C
Storage temperature range T
stg
- 55 to + 100 °C
Soldering temperature 2 mm from case, 10 s T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 50 mA V
F
1.25 1.6 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF
OUTPUT
Collector emitter voltage I
C
= 1 mA V
CEO
32 V
Emitter collector voltage I
E
= 100 μA V
ECO
7V
Collector emitter leakage current V
CE
= 20 V, I
F
= 0 A I
CEO
200 nA
COUPLER
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 1 mA V
CEsat
0.3 V
Cut-off frequency
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
f
c
110 kHz
Coupling capacitance f = 1 MHz C
k
0.3 pF
Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 2.1, 24-Feb-11 3
CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output,
Very High Isolation Voltage
Vishay Semiconductors
Note
• According to DIN EN 60747-5-2 (see fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Safety Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 10 mA
CNY64,
CNY65,
CNY66
CTR 50 300 %
CNY64A CTR 63 125 %
CNY65A CTR 63 125 %
CNY64B CTR 100 200 %
CNY65B CTR 100 200 %
CNY66B CTR 100 200 %
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test
100 %, t
test
= 1 s V
pd
2.8 kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see fig. 2)
V
pd
2.2 kV
Insulation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
R
IO
10
9
Forward current I
SI
120 mA
Power dissipation P
SO
250 mW
Rated impulse voltage V
IOTM
12 kV
Safety temperature T
SI
150 °C
0
25
50
75
100
125
150
175
200
225
250
0 25 50 75 100 125 150 175 200
T
SI
- Safety Temperature(°C)
P
SO
(mW)
I
SI
(mA)
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
P1-P3P4-P6P7-P9

CNY66B

Mfr. #:
Buy CNY66B
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers 15kV 100-200%CTR High Islation 700mil
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet