NLAS4684
http://onsemi.com
4
DC ELECTRICAL CHARACTERISTICS Analog Section
Symbol Parameter Condition V
CC
$10%
Guaranteed Maximum Limit
Unit
555C to 255C t855C t1255C
Min Max Min Max Min Max
R
ON
(NC) NC “ON” Resistance
(Note 3)
V
IN
v V
IL
V
IS
= GND to V
CC
I
IN
I v 100 mA
2.5
3.0
5.0
0.6
0.5
0.4
0.7
0.5
0.4
0.8
0.5
0.5
R
ON
(NO) NO “ON” Resistance
(Note 3)
V
IN
w V
IH
V
IS
= GND to V
CC
I
IN
I v 100 mA
2.5
3.0
5.0
1.0
0.8
0.8
1.0
0.8
0.8
1.0
1.0
0.9
R
FLAT
(NC)
NC_OnResistance
Flatness (Notes 3, 5)
I
COM
= 100 mA
V
IS
= 0 to V
CC
2.5
3.0
5.0
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
R
FLAT
(NO)
NO_OnResistance
Flatness (Notes 3, 5)
I
COM
= 100 mA
V
IS
= 0 to V
CC
2.5
3.0
5.0
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
R
ON
OnResistance Match
Between Channels
(Notes 3 and 4)
V
IS
= 1.3 V;
I
COM
= 100 mA
V
IS
= 1.5 V;
I
COM
= 100 mA
V
IS
= 2.8 V;
I
COM
= 100 mA
2.5
3.0
5.0
0.18
0.06
0.06
0.18
0.06
0.06
0.18
0.06
0.06
I
NC(OFF)
I
NO(OFF)
NC or NO Off
Leakage Current
(Figure 13) (Note 3)
V
IN
= V
IL
or V
IH
V
NO
or V
NC
= 1.0
V
COM
= 4.5 V
5.5 1 1 10 10 100 100 nA
I
COM(ON)
COM ON
Leakage Current
(Figure 13) (Note 3)
V
IN
= V
IL
or V
IH
V
NO
1.0 V or 4.5 V with
V
NC
floating or
V
NC
1.0 V or 4.5 V with
V
NO
floating
V
COM
= 1.0 V or 4.5 V
5.5 2 2 20 20 200 200 nA
3. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
4. R
ON
=
R
ON(MAX)
R
ON(MIN)
between NC1 and NC2 or between NO1 and NO2.
5. Flatness is defined as the difference between the maximum and minimum value of onresistance as measured over the specified analog
signal ranges.
NLAS4684
http://onsemi.com
5
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns) (Typical characteristics are at 25°C)
Symbol
Parameter Test Conditions
V
CC
(V)
V
IS
(V)
Guaranteed Maximum Limit
Unit
*555C to 255C t855C t1255C
Min Typ Max Min Max Min Max
t
ON
TurnOn Time
R
L
= 50  C
L
= 35 pF
(Figures 4 and 5)
2.5
3.0
5.0
1.3
1.5
2.8
60
50
30
70
60
35
70
60
35
ns
t
OFF
TurnOff Time
R
L
= 50  C
L
= 35 pF
(Figures 4 and 5)
2.5
3.0
5.0
1.3
1.5
2.8
50
40
30
55
50
35
55
50
35
ns
t
BBM
Minimum BreakBeforeMake
Time (Note 6)
V
IS
= 3.0
R
L
= 300  C
L
= 35 pF
(Figure 3)
3.0 1.5 2 15
ns
Typical @ 25, V
CC
= 5.0 V
C
NC
Off
C
NO
Off
C
NC
On
C
NO
On
NC Off Capacitance, f = 1 MHz
NO Off Capacitance, f = 1 MHz
NC On Capacitance, f = 1 MHz
NO On Capacitance, f = 1 MHz
102
104
322
330
pF
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol Parameter Condition
V
CC
V
Typical
Unit
255C
BW Maximum OnChannel 3dB
Bandwidth or Minimum Frequency
Response
V
IN
= 0 dBm NC
V
IN
centered between V
CC
and GND
(Figure 6) NO
3.0
3.0
6.5
9.5
MHz
V
ONL
Maximum Feedthrough On Loss
V
IN
= 0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND (Figure 6)
3.0 0.05 dB
V
ISO
OffChannel Isolation (Note 7)
f = 100 kHz; V
IS
= 1 V RMS; C
L
= 5 nF
V
IN
centered between V
CC
and GND(Figure 6)
3.0 65
dB
Q Charge Injection Select Input to
Common I/O (Figures 10 and 11)
V
IN
=
V
CC
to
GND, R
IS
= 0 , C
L
= 1 nF
Q = C
L
V
OUT
(Figure 7)
3.0 15 pC
THD Total Harmonic Distortion THD +
Noise (Figure 9)
F
IS
= 20 Hz to 100 kHz, R
L
= R
gen
= 600 , C
L
= 50 pF
V
IS
= 1 V RMS
3.0 0.14 %
VCT ChanneltoChannel Crosstalk
f = 100 kHz; V
IS
= 1 V RMS, C
L
= 5 pF, R
L
= 50
V
IN
centered between V
CC
and GND (Figure 6)
3.0 83 dB
6. 55°C specifications are guaranteed by design.
7. OffChannel Isolation = 20log10 (Vcom/Vno) (See Figure 6).
NLAS4684
http://onsemi.com
6
Figure 3. t
BBM
(Time BreakBeforeMake)
Output
DUT
50
35 pF
V
CC
Switch Select Pin
90%
Output
Input
V
CC
GND
90% of V
OH
GND
Figure 4. t
ON
/t
OFF
50% 50%
90% 90%
t
ON
t
OFF
V
OH
Output
Input
V
CC
0 V
Figure 5. t
ON
/t
OFF
DUT
Open
35 pF
V
CC
Input
50% 50%
10%
t
ON
t
OFF
Output
Input
V
CC
0 V
10%
50
0.1 F
t
BMM
Output
V
OUT
V
OL
V
OUT
V
OH
V
OL
DUT
Open
V
CC
Input
Output
50
35 pF
V
OUT
0.1 F

NLAS4684FCT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Analog Switch ICs Dual SPDT 0.5ohm Sw. Low R(on) Ind. Temp
Lifecycle:
New from this manufacturer.
Delivery:
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