SI3443BDV-T1-E3 Datasheet SI3443BDV-T1-E3, SI3443BDV-T1-GE3 | P1-P3

Vishay Siliconix

Si3443BDV

Document Number: 72749

S-09-0660-Rev. C, 20-Apr-09

www.vishay.com

1

P-Channel 2.5-V (G-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• 100 % R

g

Tested

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

- 20

0.060 at V

GS

= - 4.5 V

- 4.7

0.090 at V

GS

= - 2.7 V

- 3.8

0.100 at V

GS

= - 2.5 V

- 3.7

TSOP-6

Top V iew

6

4

1

2

3

5

2.85 mm

3 mm

Ordering Information:

Si3443BDV-T1-E3 (Lead (Pb)-free)

Si3443BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)

Part Marking Code: 3B

(4) S

(3) G

(1, 2, 5, 6) D

P-Channel MOSFE

T

Notes

a. Surface Mounted on FR4 board, t ≤ 5 s.

For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

V

DS

- 20

V

Gate-Source Voltage

V

GS

± 12

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

- 4.7 - 3.6

A

T

A

= 70 °C

- 3.8 - 2.8

Pulsed Drain Current

I

DM

- 20

Continuous Source Current (Diode Conduction)

a

I

S

- 1.7 - 0.9

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

2.0 1.1

W

T

A

= 70 °C

1.3 0.7

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

R

thJA

50 62.5

°C/W

Steady State 90 110

Maximum Junction-to-Foot (Drain) Steady State

R

thJF

30 36

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Document Number: 72749

S-09-0660-Rev. C, 20-Apr-09

Vishay Siliconix

Si3443BDV

Notes

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.6 - 1.4 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 12 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 20 V, V

GS

= 0 V

- 1

µA

V

DS

= - 20 V, V

GS

= 0 V, T

J

= 70 °C

- 5

On-State Drain Current

a

I

D(on)

V

DS

= - 5 V, V

GS

= - 4.5 V

- 15 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 4.7 A

0.048 0.060

Ω

V

GS

= - 2.7 V, I

D

= - 3.8 A

0.070 0.090

V

GS

= - 2.5 V, I

D

= - 1 A

0.080 0.100

Forward Transconductance

a

g

fs

V

DS

= - 10 V, I

D

= - 4.7 A

11 S

Diode Forward Voltage

a

V

SD

I

S

= - 1.7 A, V

GS

= 0 V

- 0.8 - 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= - 10 V, V

GS

= - 4.5 V, I

D

= - 4.7 A

69

nCGate-Source Charge

Q

gs

1.4

Gate-Drain Charge

Q

gd

1.9

Gate Resistance

R

g

f = 1 MHz 5 9.5 16.2 Ω

Tur n-O n Delay T i me

t

d(on)

V

DD

= - 10 V, R

L

= 10 Ω

I

D

≅ - 1.0 A, V

GEN

= - 4.5 V, R

g

= 6 Ω

22 35

ns

Rise Time

t

r

35 55

Turn-Off Delay Time

t

d(off)

45 70

Fall Time

t

f

25 40

Source-Drain Reverse Recovery

Time

t

rr

I

F

= - 1.7 A, dI/dt = 100 A/µs

25 50

Output Characteristics

0

4

8

12

16

20

012345

V

GS

= 5 V thru 3.5 V

2.5 V

2 V

3 V

1.5 V

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

Transfer Characteristics

0

4

8

12

16

20

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

T

C

= - 55 °C

125 °C

25 °C

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

Document Number: 72749

S-09-0660-Rev. C, 20-Apr-09

www.vishay.com

3

Vishay Siliconix

Si3443BDV

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.00

0.04

0.08

0.12

0.16

0.20

048121620

V

GS

= 2.7 V

V

GS

= 4.5 V

V

GS

= 2.5 V

I

D

- Drain Current (A)

- On-Resistance (Ω)R

DS(on)

0

1

2

3

4

5

012345678

I

D

= 4.7 A

V

DS

= 10 V

Q

g

- Total Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

T

J

= 150 °C

30

10

1

T

J

= 25 °C

I

S

- Source Current (A)

V

SD

- Source-to-Drain Voltage (V)

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

200

400

600

800

1000

048121620

C

rss

C

oss

C

iss

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

- 50 - 25 0 25 50 75 100 125 150

I

D

= 4.7 A

V

GS

= 10 V

R

DS(on)

- On-Resistance

(Normalized)

T

J

- Junction Temperature (°C)

0.00

0.04

0.08

0.12

0.16

0.20

012345

I

D

= 4.7 A

I

D

= 1 A

V

GS

- Gate-to-Source Voltage (V)

- On-Resistance (Ω)R

DS(on)

SI3443BDV-T1-E3

SI3443BDV-T1-E3

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