USB2229/USB2230
DS00002252A-page 20 2005-2016 Microchip Technology Inc.
Note 6-3 Output leakage is measured with the current pins in high impedance.
Note 6-4 See Appendix A for USB DC electrical characteristics.
Note 6-5 The Maximum power dissipation parameters of the package should not be exceeded.
Note 6-6 The assignment of each Integrated Card Power FET to a designated Card Connector is controlled
by both firmware and the specific board implementation. Firmware will default to the settings listed in
Table 8-1, “GPIO Usage (ROM Rev -11),” on page 23.
Integrated Power FET for
GPIO8 & GPIO10
Output Current
Short Circuit Current Limit
On Resistance
Output Voltage Rise Time
I
OUT
I
SC
R
DSON
t
DSON
100
140
2.1
800
mA
mA
s
GPIO8 or 10;
Vdrop
FET
= 0.23V
GPIO8 or 10; Vout
FET
= 0V
GPIO8 or 10;
I
FET
= 70mA
GPIO8 or 10;
C
LOAD
= 10F
Integrated Power FET for
GPIO11)
Output Current
Short Circuit Current Limit
On Resistance
Output Voltage Rise Time
I
OUT
I
SC
R
DSON
t
DSON
200
181
2.1
800
mA
mA
s
GPIO11;
Vdrop
FET
= 0.46V
GPIO11;
Vout
FET
= 0V
GPIO11;
I
FET
= 70mA
GPIO11;
C
LOAD
= 10F
Supply Current Unconfigured I
CCINIT
45
10
60
20
mA
mA
@ V
DD18,
V
DD18PLL
=
1.8V
@ V
DD33,
V
DDA33
=
3.3V
Supply Current Active
(Full Speed)
I
CC
35
15
60
30
mA
mA
@ V
DD18,
V
DD18PLL
=
1.8V
@ V
DD33,
V
DDA33
=
3.3V
Supply Current Active
(High Speed)
I
CC
45
15
70
30
mA
mA
@ V
DD18,
V
DD18PLL
=
1.8V
@ V
DD33,
V
DDA33
=
3.3V
Supply Current Standby I
CSBY
160
215
180
240
µA
µA
@ V
DD18,
V
DD18PLL
=
1.8V
@ V
DD33,
V
DDA33
=
3.3V
Parameter Symbol MIN TYP MAX Units Comments
