APT50MC120JCU2 Datasheet APT50MC120JCU2 | P1-P3

APT50MC120JCU2

APT50MC120JCU2 – Rev 1 June, 2013

www.microsemi.com

1-6

All ratings @ T

j

= 25°C unless otherwise specified

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

G

S

D

K

ISOTOP

®

Symbol Parameter Max ratings Unit

V

DSS

Drain - Source Breakdown Voltage 1200 V

I

D

Continuous Drain Current

T

c

= 25°C 71

A

T

c

= 80°C 54

I

DM

Pulsed Drain current 140

V

GS

Gate - Source Voltage -10/+25 V

R

DSon

Drain - Source ON Resistance

34

mΩ

P

D

Maximum Power Dissipation T

c

= 25°C 300 W

Application

• AC and DC motor control

• Switched Mode Power Supplies

• Power Factor Correction

• Brake switch

Features

• SiC Power MOSFET

- Low R

DS(on)

- High temperature performance

• SiC Schottky Diode

- Zero reverse recovery

- Zero forward recovery

- Temperature Independent switching behavior

- Positive temperature coefficient on VF

• ISOTOP

®

Package (SOT-227)

• Very low stray inductance

• High level of integration

Benefits

• Outstanding performance at high frequency

operation

• Stable temperature behavior

• Very rugged

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Easy paralleling due to positive TC of VCEsat

• RoHS Compliant

ISOTOP

®

Boost chopper

SiC MOSFET + SiC chopper diode

Power module

K

D

G

S

V

DSS

= 1200V

R

DSon

= 34mΩ max @ Tj = 25°C

I

D

= 71A @ Tc = 25°C

APT50MC120JCU2

APT50MC120JCU2 – Rev 1 June, 2013

www.microsemi.com

2-6

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

DSS

Zero Gate Voltage Drain Current V

GS

= 0V , V

DS

= 1200V 12 100 µA

R

DS(on)

Drain – Source on Resistance

V

GS

= 20V

I

D

= 50A

T

j

= 25°C 25 34

mΩ

T

j

= 150°C 43 63

V

GS

(

th

)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 1mA 1.9 2.3 V

I

GSS

Gate – Source Leakage Current V

GS

= 20 V, V

DS

= 0V 0.5 µA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

iss

Input Capacitance

V

GS

= 0V

V

DS

= 1000V

f = 1MHz

2980

pF C

oss

Output Capacitance 220

C

rss

Reverse Transfer Capacitance 23

Q

g

Total gate Charge

V

GS

= 20V

V

Bus

= 800V

I

D

=50A

179

nC

Q

gs

Gate – Source Charge 32

Q

gd

Gate – Drain Charge 63

T

d(on)

Turn-on Delay Time

V

GS

= -2/+20V

V

Bus

= 800V

I

D

= 50A

R

L

= 16Ω ; R

G

= 20Ω

21

ns

T

r

Rise Time 19

T

d(off)

Turn-off Delay Time 50

T

f

Fall Time 30

E

on

Turn on Energy

Inductive Switching

V

GS

= -5/+20V

V

Bus

= 600V

I

D

= 50A

R

G

= 20Ω

T

j

= 150°C 1.1

mJ

E

off

Turn off Energy T

j

= 150°C 0.6

R

thJC

Junction to Case Thermal Resistance 0.42 °C/W

SiC chopper diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

1200 V

I

RM

Maximum Reverse Leakage Current V

R

=1200V

T

j

= 25°C 64 400

µA

T

j

= 175°C 112 2000

I

F

DC Forward Current Tc = 125°C 20 A

V

F

Diode Forward Voltage I

F

= 20A

T

j

= 25°C 1.6 1.8

V

T

j

= 175°C 2.3 3

Q

C

Total Capacitive Charge

I

F

= 20A, V

R

= 1200V

di/dt =1000A/µs

160 nC

C Total Capacitance

f = 1MHz, V

R

= 200V 192

pF

f = 1MHz, V

R

= 400V 138

R

thJC

Junction to Case Thermal Resistance 0.8 °C/W

APT50MC120JCU2

APT50MC120JCU2 – Rev 1 June, 2013

www.microsemi.com

3-6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

R

thJA

Junction to Ambient (IGBT & Diode) 20 °C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 V

T

STG

Storage Temperature Range -40 150

°C

T

J

Operating junction temperature range

SiC MOSFET -40 150

SiC diode -40 175

T

JOP

Recommended junction temperature under switching conditions -40

T

J

max

-25

Torque Terminals and mounting screws 1.1 N.m

Wt Package Weight 29.2 g

SOT-227 (ISOTOP

®

) Package Outline

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

*

r = 4.0 (.157)

(2 places)

4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

Emitter terminals are shorted

internally. Current handling

capability is equal for either

Emitter terminal.

Typical Mosfet Performance Curve

Ciss

Crss

Coss

10

100

1000

10000

0 200 400 600 800 1000

C, Capacitance (pF)

V

DS

, Drain to Source Voltage (V)

Capacitance vs Drain to Source Voltage

0

4

8

12

16

20

0 20 40 60 80 100 120 140 160 180

V

GS

, Gate to Source Voltage (V)

Gate Charge (nC)

Gate Charge vs Gate to Source Voltage

V

GS

= 20V

I

D

= 50A

V

DS

= 800V

Hard

switching

ZCS

ZVS

0

100

200

300

400

500

600

700

10 20 30 40 50 60 70 80

Frequency (kHz)

I

D

, Drain Current (A)

Operating Frequency vs Drain Current

V

BUS

=600V

D=50%

R

G

=20

T

J

=1 50 °C

T

C

=75 °C

Source

Gate

Drain

Cathode

APT50MC120JCU2

APT50MC120JCU2

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