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MAX2601ESA+

P1-P3P4-P6
General Description
The MAX2601/MAX2602 are RF power transistors opti-
mized for use in portable cellular and wireless equipment
that operates from three NiCd/NiMH cells or one Li-Ion
cell. These transistors deliver 1W of RF power from a
3.6V supply with efficiency of 58% when biased for con-
stant-envelope applications (e.g., FM or FSK). For NADC
(IS-54) operation, they deliver 29dBm with -28dBc ACPR
from a 4.8V supply.
The MAX2601 is a high-performance silicon bipolar RF
power transistor. The MAX2602 includes a high-
performance silicon bipolar RF power transistor, and a
biasing diode that matches the thermal and process
characteristics of the power transistor. This diode is
used to create a bias network that accurately controls
the power transistor’s collector current as the tempera-
ture changes.
The MAX2601/MAX2602 can be used as the final stage
in a discrete or module power amplifier. Silicon bipolar
technology eliminates the need for voltage inverters
and sequencing circuitry, as required by GaAsFET
power amplifiers. Furthermore, a drain switch is not
required to turn off the MAX2601/MAX2602. This
increases operating time in two ways: it allows lower
system end-of-life battery voltage, and it eliminates the
wasted power from a drain-switch device.
The MAX2601/MAX2602 are available in thermally
enhanced, 8-pin SO packages, which are screened to
the extended temperature range (-40°C to +85°C).
________________________Applications
Narrow-Band PCS (NPCS)
915MHz ISM Transmitters
Microcellular GSM (Power Class 5)
AMPS Cellular Phones
Digital Cellular Phones
Two-Way Paging
CDPD Modems
Land Mobile Radios
____________________________Features
♦♦
Low Voltage: Operates from 1 Li-Ion or
3 NiCd/NiMH Batteries
♦♦
DC-to-Microwave Operating Range
♦♦
1W Output Power at 900MHz
♦♦
On-Chip Diode for Accurate Biasing (MAX2602)
♦♦
Low-Cost Silicon Bipolar Technology
♦♦
Does Not Require Negative Bias or Supply Switch
♦♦
High Efficiency: 58%
MAX2601/MAX2602
3.6V, 1W RF Power Transistors
for 900MHz Applications
________________________________________________________________
Maxim Integrated Products
1
19-1185; Rev 3; 9/08
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Ordering Information
Typical Application Circuit appears at end of data sheet.
PART TEMP RANGE PIN-PACKAGE
MAX2601ESA -40°C to +85°C 8 SOIC
MAX2602ESA -40°C to +85°C 8 SOIC
Pin Configurations
PSOPII
TOP VIEW
PSOPII
8
7
6
5
1
2
3
4
C
E
E
B
C
E
E
B
MAX2602
8
7
6
5
1
2
3
4
C
E
BIAS
B
C
E
E
B
MAX2601
EVALUATION KIT
AVAILABLE
dBc
MAX2601/MAX2602
3.6V, 1W RF Power Transistors
for 900MHz Applications
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(T
A
= T
MIN
to T
MAX
, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Collector-Emitter Voltage, Shorted Base (V
CES
) ....................17V
Emitter Base Reverse Voltage (V
EBO
)...................................2.3V
BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V
Average Collector Current (I
C
)........................................1200mA
Continuous Power Dissipation (T
A
= +70°C)
SOIC (derate 80mW/°C above +70°C) (Note 1) .............6.4W
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +165°C
Junction Temperature......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
I
C
< 100µA
V5.0LV
CEO
Collector-Emitter Sustaining
Voltage
V
15BV
CES
15BV
CEO
Collector-Emitter Breakdown
Voltage
100h
FE
DC Current Gain
µA0.05 1.5I
CES
Collector Cutoff Current
pF9.6C
OB
Output Capacitance
UNITSMIN TYP MAXSYMBOLPARAMETER
Note 1: Backside slug must be properly soldered to ground plane (see
Slug Layout Techniques
section).
I
C
= 200mA
Shorted base
Open base
I
C
= 250mA, V
CE
= 3V
V
CE
= 6V, V
BE
= 0V
V
CB
= 3V, I
E
= 0mA, f = 1MHz
CONDITIONS
dB3.3NFNoise Figure
dBc
-25IM5
Two-Tone IMR
-16IM3
8:1V
SWR
Stability under Continuous
Load Mismatch Conditions
%58
η
Collector Efficiency
dB11.6Power Gain
-42
2fo, 3foHarmonics
-43
mA4.2I
B
Base Current
GHzDC 1fFrequency Range
UNITSMIN TYP MAXSYMBOLPARAMETER
V
BB
= 0.9V
P
OUT
= +30dBm total power, f1 = 835MHz,
f2 = 836MHz
V
CC
= 3.6V, P
OUT
= 30dBm
V
CC
= 5.5V, all angles (Note 3)
(Note 2)
No modulation
P
OUT
= 30dBm
CONDITIONS
AC ELECTRICAL CHARACTERISTICS
(Test Circuit of Figure 1, V
CC
= 3.6V, V
BB
= 0.750V, Z
LOAD
= Z
SOURCE
= 50Ω, P
OUT
= 30dBm, f = 836MHz, T
A
= +25°C, unless oth-
erwise noted.)
Note 2: Guaranteed by design.
Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric
degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation
capability is observed.
V15BV
CBO
Collector-Base Breakdown
Voltage
I
C
< 100µA, emitter open
V
CC
= 3.0V, P
OUT
= 29dBm
dBc
MAX2601/MAX2602
3.6V, 1W RF Power Transistors
for 900MHz Applications
_______________________________________________________________________________________ 3
1.0
0
06
COLLECTOR CURRENT
0.2
0.8
MAX2601-01
V
CE
(V)
I
CC
(A)
24513
0.6
0.4
V
BB
= 1.00V
V
BB
= 0.95V
V
BB
= 0.90V
V
BB
= 0.85V
V
BB
= 0.80V
31
0.4
TWO-TONE OUTPUT POWER AND IM3
vs. COLLECTOR CURRENT
27
30
MAX2601-02
I
CC
(A)
P
OUT
(dBm)
0.6 0.80.5 0.7
29
28
20
16
19
18
17
P
OUT
IM3
P
OUT
, IM3, AND IM5
ARE RMS COMPOSITE
TWO-TONE POWER LEVELS
35
5
TWO-TONE OUTPUT POWER, IM3, IM5
vs. INPUT POWER
-5
25
MAX2601-03
INPUT POWER (dBm)
P
OUT
, IM3, IM5 (dBm)
15 2510 20
15
5
P
OUT
IM5
IM3
P
OUT
, IM3, AND IM5
ARE RMS COMPOSITE
TWO-TONE POWER
LEVELS
35
5
TWO-TONE OUTPUT POWER, IM3, IM5
vs. INPUT POWER (f = 433MHz)
-5
25
MAX2601-04
INPUT POWER (dBm)
P
OUT
, IM3, IM5 (dBm)
15 2510 20
15
5
P
OUT
IM5
IM3
P
OUT
, IM3, AND IM5
ARE RMS COMPOSITE
TWO-TONE
POWER LEVELS
-20
-22
-24
-26
-28
10
ACPR vs. OUTPUT POWER
(IS-54 π/4 DQPSK MODULATION, V
BB
= 0.85V)
-40
MAX2601-05
OUTPUT POWER (dBm)
ACPR
(dB
c
)
20 3515 25 30
-30
-32
-34
-36
-38
3.0V
3.6V
4.8V
4.2V
60
10
COLLECTOR EFFICIENCY vs. OUTPUT POWER
(IS-54 π/4 DQPSK MODULATION, V
BB
= 0.85V)
0
MAX2601-06
OUTPUT POWER (dBm)
EFFICIENCY (%)
20 3515 25 30
30
40
50
20
10
3.0V
3.6V
4.8V
4.2V
P
OUT
, IM3, AND IM5
ARE RMS COMPOSITE
TWO-TONE POWER
LEVELS
__________________________________________Typical Operating Characteristics
(Test Circuit of Figure 1, input/output matching networks optimized for specific measurement frequency, V
CC
= 3.6V, V
BB
= 0.750V,
P
OUT
= 30dBm, Z
LOAD
= Z
SOURCE
= 50Ω, f = 836MHz, T
A
= +25°C, unless otherwise noted.)
NAME
—
1, 8 C Transistor Collector
2, 3, 6, 7, Slug E Transistor Emitter
BIAS
4, 5 B Transistor Base
Anode of the Biasing Diode that matches the thermal and process char-
acteristics of the power transistor. Requires a high-RF-impedance, low-
DC-impedance (e.g., inductor) connection to the transistor base (Pin 4).
Current through the biasing diode (into Pin 3) is proportional to 1/15 the
collector current in the transistor.
FUNCTION
MAX2601 MAX2602
3
1, 8
2, 6, 7, Slug
PIN
4, 5
______________________________________________________________Pin Description
P1-P3P4-P6

MAX2601ESA+

Mfr. #:
Buy MAX2601ESA+
Manufacturer:
Maxim Integrated
Description:
RF Bipolar Transistors 3.6V 1W RF Pwr Trans for 900MHz Ap
Lifecycle:
New from this manufacturer.
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