MPF4393G

MPF4392, MPF4393
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4
Figure 5. Switching Time Test Circuit
10
2.0
15
3.0
5.0
7.0
0.5 1.0 3.0 305.00.30.1 100.050.03
V
R
, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
50 17020-10-40 80 140-70
r
1.8
1.0
2.0
1.2
1.4
1.6
0.8
0.6
0.4
, DRAIN-SOURCE ON-STATE
ds(on)
RESISTANCE (NORMALIZED)
T
channel
, CHANNEL TEMPERATURE (°C)
1.5
1.0
110
V
DD
V
GG
R
GG
R
T
R
GEN
50 W
V
GEN
R
K
R
D
OUTPUT
INPUT
50
W
50
W
SET V
DS(off)
= 10 V
INPUT PULSE
t
r
0.25 ns
t
f
0.5 ns
PULSE WIDTH = 2.0 ms
DUTY CYCLE 2.0%
R
GG
& R
K
R
D
= R
D
(R
T
+ 50)
R
D
+ R
T
+ 50
Figure 6. Typical Forward Transfer Admittance
NOTE 1
The switching characteristics shown above were measured using a
test circuit similar to Figure 5. At the beginning of the switching
interval, the gate voltage is at Gate Supply Voltage (V
GG
). The
DrainSource Voltage (V
DS
) is slightly lower than Drain Supply
Voltage (V
DD
) due to the voltage divider. Thus Reverse Transfer
Capacitance (C
rss
) or GateDrain Capacitance (C
gd
) is charged to
V
GG
+ V
DS
.
During the turnon interval, GateSource Capacitance (C
gs
)
discharges through the series combination of R
Gen
and R
K
. C
gd
must discharge to V
DS(on)
through R
G
and R
K
in series with the
parallel combination of effective load impedance (R
D
) and
DrainSource Resistance (r
ds
). During the turnoff, this charge
flow is reversed.
Predicting turnon time is somewhat difficult as the channel
resistance r
ds
is a function of the gatesource voltage. While C
gs
discharges, V
GS
approaches zero and r
ds
decreases. Since C
gd
discharges through r
ds
, turnon time is nonlinear. During turnoff,
the situation is reversed with r
ds
increasing as C
gd
charges.
The above switching curves show two impedance conditions:
1) R
K
is equal to R
D
which simulates the switching behavior of
cascaded stages where the driving source impedance is normally the
load impedance of the previous stage, and 2) R
K
= 0 (low
impedance) the driving source impedance is that of the generator.
Figure 7. Typical Capacitance
I
D
, DRAIN CURRENT (mA)
2.0
5.0
3.0
7.0
0.5 1.0 3.0 7.05.0 5030
10
20
0.7 2.0 10 20
, FORWARD TRANSFER ADMITTANCE (mmhos)
fs
y
80
120
160
200
1.0 3.0 5.02.0
V
GS
, GATE-SOURCE VOLTAGE (VOLTS)
4.00
40
6.0 7.0 8.0
0
r , DRAIN-SOURCE ON-STATE
ds(on)
RESISTANCE (OHMS)
T
channel
= 25°C
(C
ds
IS NEGLIGIBLE)
C
gs
T
channel
= 25°C
V
DS
= 15 V
Figure 8. Effect of GateSource Voltage
On DrainSource Resistance
Figure 9. Effect of Temperature On
DrainSource OnState Resistance
MPF4392
MPF4393
C
gd
I
D
= 1.0 mA
V
GS
= 0
I
DSS
= 10
mA
25
mA
50 mA 75 mA 100 mA 125 mA
T
channel
= 25°C
MPF4392, MPF4393
http://onsemi.com
5
I
DSS
, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)
, DRAIN-SOURCE ON-STATE
ds(on)
r
20
10
30
40
50
30 40 50 60
70
20
RESISTANCE (OHMS)
0
10
0
1.0
2.0
3.0
4.0
5.0
, GATE-SOURCE VOLTAGE
GS
V
(VOLTS)
6.0
7.0
8.0
9.0
10
70
60
80
90
100
80 90 100 110 120 130 140 150
NOTE 2
The ZeroGateVoltage Drain Current (I
DSS
), is the
principle determinant of other JFET characteristics.
Figure 10 shows the relationship of GateSource Off
Voltage (V
GS(off)
) and DrainSource On Resistance
(r
ds(on)
) to I
DSS
. Most of the devices will be within ±10%
of the values shown in Figure 10. This data will be useful
in predicting the characteristic variations for a given part
number.
For example:
Unknown
r
ds(on)
and V
GS
range for an MPF4392
The electrical characteristics table indicates that an
MPF4392 has an I
DSS
range of 25 to 75 mA. Figure 10
shows r
ds(on)
= 52 W for I
DSS
= 25 mA and 30 W for I
DSS
75 mA. The corresponding V
GS
values are 2.2 V and
4.8 V.
Figure 10. Effect of I
DSS
On DrainSource
Resistance and GateSource Voltage
T
channel
= 25°C
r
DS(on)
@ V
GS
= 0
V
GS(off)
MPF4392, MPF4393
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6
PACKAGE DIMENSIONS
TO92 (TO226)
CASE 2911
ISSUE AM
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
XX
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
V 0.135 --- 3.43 ---
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
B
K
G
SECTION XX
C
V
D
N
XX
SEATING
PLANE
DIM MIN MAX
MILLIMETERS
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 ---
N 2.04 2.66
P 1.50 4.00
R 2.93 ---
V 3.43 ---
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
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MPF4392/D
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MPF4393G

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ON Semiconductor
Description:
JFET 30V 10mA
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