NTS10120MFST3G

© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 0
1 Publication Order Number:
NTS10120MFS/D
NTS10120MFS,
NRVTS10120MFS
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing Diodes
Reverse Battery Protection
LED Lighting
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
TRENCH SCHOTTKY
RECTIFIERS
10 AMPERES
120 VOLTS
http://onsemi.com
1,2,3
5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
TH1012 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
TH1012
AYWWZZ
A
A
A
Not Used
C
C
1
Device Package Shipping
ORDERING INFORMATION
NTS10120MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTS10120MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVTS10120MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVTS10120MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NTS10120MFS, NRVTS10120MFS
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
120
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 138°C)
I
F(AV)
10 A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave, 20 kHz, T
C
= 136°C)
I
FRM
20 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
200 A
Storage Temperature Range T
stg
−65 to +150 °C
Operating Junction Temperature T
J
−55 to +150 °C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) E
AS
100 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JC
1.8 °C/W
ELECTRICAL CHARACTERISTICS
Rating Symbol Typ Max Unit
Instantaneous Forward Voltage (Note 1)
(I
F
= 5 A, T
J
= 25°C)
(I
F
= 10 A, T
J
= 25°C)
(I
F
= 5 A, T
J
= 125°C)
(I
F
= 10 A, T
J
= 125°C)
V
F
0.587
0.73
0.510
0.587
0.825
0.67
V
Instantaneous Reverse Current (Note 1)
(V
R
= 90 V, T
J
= 25°C)
(Rated dc Voltage, T
J
= 25°C)
(V
R
= 90 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
3.4
14.5
3.5
9.2
55
30
mA
mA
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
NTS10120MFS, NRVTS10120MFS
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.21.0 1.40.40.20
0.1
1
10
100
1.40.40.20
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
1009070504030100
1.E−07
1008070605020100
1.E−07
Figure 5. Typical Junction Capacitance Figure 6. Current Derating
V
R
, REVERSE VOLTAGE (V) T
C
, CASE TEMPERATURE (°C)
1001010.1
10
100
1000
10,000
140130120 150110 115
0
5
10
15
20
25
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
0.6 0.8 0.6 1.20.8
20 60 80 110 120
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
30 40 90 120110
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
T
A
= 125°C
T
A
= 150°C
T
A
= −55°C
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
T
A
= −55°C
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
T
A
= 25°C
T
J
= 25°C
Square Wave
DC
R
q
JC
= 1.8°C/W
1.0
1.E−06
1.E−05
1.E−06
125 135 145

NTS10120MFST3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers LOW VF 10A 120V TRENCH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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