TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/464
T4-LDS-0162 Rev. 1 (100546) Page 1 of 3
DEVICES LEVELS
2N5685 2N5686 JAN
JANTX
JANTV
Note:
1. Derate linearly 1.715 W/°C between T
C
= 25°C and T
C
= 200°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
(1)
Collector-Emitter Breakdown Voltage
I
C
= 100mAdc 2N5685
2N5686
V
(BR)CEO
60
80
Vdc
Collector-Emitter Cutoff Current
V
CE
= 30Vdc
V
CE
= 40Vdc
2N5685
2N5686
I
CEO
500
500
μAdc
Collector-Emitter Cutoff Current
V
CE
= 60Vdc, V
BE
= 1.5Vdc
V
CE
= 80Vdc, V
BE
= 1.5Vdc
2N5685
2N5686
I
CEX
10
10
μAdc
Collector-Base Cutoff Current
V
CE
= 60Vdc
V
CE
= 80Vdc
2N5685
2N5686
I
CBO
2.0
2.0
mAdc
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
I
EBO
1.0 mAdc
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N5685 2N5686 Unit
Collector-Emitter Voltage V
CEO
60 80 Vdc
Collector-Base Voltage V
CBO
60 80 Vdc
Emitter-Base Voltage V
EBO
5.0 5.0 Vdc
Base Current I
B
15 15 Adc
Collector Current I
C
50 50 Adc
Total Power Dissipation
@ T
C
= +25°C
(1)
@ T
C
= +100°C
(1)
P
T
300
171
300
171
W
W
Operating & Storage Junction Temperature Range T
J
, T
stg
-55 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
.0584 °C/W
TO-3 (TO-204AE)