JANTX2N5685

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/464
T4-LDS-0162 Rev. 1 (100546) Page 1 of 3
DEVICES LEVELS
2N5685 2N5686 JAN
JANTX
JANTV
Note:
1. Derate linearly 1.715 W/°C between T
C
= 25°C and T
C
= 200°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
(1)
Collector-Emitter Breakdown Voltage
I
C
= 100mAdc 2N5685
2N5686
V
(BR)CEO
60
80
Vdc
Collector-Emitter Cutoff Current
V
CE
= 30Vdc
V
CE
= 40Vdc
2N5685
2N5686
I
CEO
500
500
μAdc
Collector-Emitter Cutoff Current
V
CE
= 60Vdc, V
BE
= 1.5Vdc
V
CE
= 80Vdc, V
BE
= 1.5Vdc
2N5685
2N5686
I
CEX
10
10
μAdc
Collector-Base Cutoff Current
V
CE
= 60Vdc
V
CE
= 80Vdc
2N5685
2N5686
I
CBO
2.0
2.0
mAdc
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
I
EBO
1.0 mAdc
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N5685 2N5686 Unit
Collector-Emitter Voltage V
CEO
60 80 Vdc
Collector-Base Voltage V
CBO
60 80 Vdc
Emitter-Base Voltage V
EBO
5.0 5.0 Vdc
Base Current I
B
15 15 Adc
Collector Current I
C
50 50 Adc
Total Power Dissipation
@ T
C
= +25°C
(1)
@ T
C
= +100°C
(1)
P
T
300
171
300
171
W
W
Operating & Storage Junction Temperature Range T
J
, T
stg
-55 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
.0584 °C/W
TO-3 (TO-204AE)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0162 Rev. 1 (100546) Page 2 of 3
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 5.0Adc, V
CE
= 2.0Vdc
I
C
= 25Adc, V
CE
= 2.0Vdc
I
C
= 50Adc, V
CE
= 5.0Vdc
h
FE
30
15
5.0
60
Collector-Emitter Saturation Voltage
I
C
= 25Adc, I
B
= 2.5Adc
I
C
= 50Adc, I
B
= 10Adc
V
CE(sat)
1.0
5.0
Vdc
Base-Emitter Saturation Voltage
I
C
= 25Adc, I
B
= 2.5Adc
V
BE(sat)
2.0
Vdc
Base-Emitter Voltage
I
C
= 25Adc, V
CE
= 2.0Adc
V
BE(ON)
2.0
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-Circuit, Forward
Current Transfer Ratio
I
C
= 5.0Adc, V
CE
= 10Vdc, f = 1.0MHz
|h
fe
|
2.0 20
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 10Adc, V
CE
= 5.0Vdc, f = 1.0kHz
h
fe
15
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 0.1MHz f 1.0MHz
C
obo
1200
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
V
CC
= 30Vdc; I
C
= 25Adc; I
B1
= 2.5Adc
t
on
1.5
μs
Turn-Off Time
V
CC
= 30Vdc ; I
C
= 25Adc; I
B1
= -I
B2
= 2.5Adc
t
off
3.0
μs
SAFE OPERATING AREA
DC Tests
T
C
= +25°C, 1 Cycle, t = 1.0s
Test 1
V
CE
= 6.0Vdc, I
C
= 50Adc
Test 2
V
CE
= 30Vdc, I
C
= 10Adc
Test 3
V
CE
= 50Vdc, I
C
= 560mAdc
V
CE
= 60Vdc, I
C
= 640mAdc
2N5685
2N5686
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0162 Rev. 1 (100546) Page 3 of 3
PACKAGE DIMENSIONS
NOTE:
1.
Dimensions are in inches.
2. Millimeters are given for general information only.
3.
Body contour is optional within zone defined by CD.
4.
These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When
gauge is not used, measurement shall be made at seating plane.
5.
Both terminals.
6.
At both ends.
7.
Two holes.
8.
The collector shall be electrically connected to the case.
9.
LD applies between L
1
and LL. Lead diameter shall not exceed twice LD within L
1
.
10.
In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
11.
Terminal 1 is emitter; terminal 2 is base; case is collector.
* FIGURE 1. Physical dimensions (TO-3)
Dimensions
Ltr Inches Millimeters Notes
Min Max Min Max
CD .875 22.22 3
CH .250 .450 6.35 11.43
HR .495 .525 12.57 13.34
HR
1
.131 .188 3.33 4.78 6
HT .060 .135 1.52 3.43
LD .057 .063 1.45 1.60 4, 5, 9
LL .312 .500 7.92 12.70 4, 5, 9
L
1
.050
1.27 5, 9
MHD .151 .165 3.84 4.19 7
MHS 1.177 1.197 29.90 30.40
PS .420 .440 10.67 11.18
PS
1
.205 .225 5.21 5.72 5
S
1
.655 .675 16.64 17.15
*

JANTX2N5685

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Trans GP BJT NPN 60V 50A 3-Pin(2+Tab) TO-3
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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