NTD4860N-1G

NTD4860N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
10V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
DS
10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
GS
= 4.5 V
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
3.8 V
3.0 V
4 V
3.6 V
2.8 V
3.2 V
3.4 V
I
D
= 30 A
T
J
= 25°C
V
GS
= 11.5 V
T
J
= 25°C
0
10
20
30
40
50
60
012345
0
10
20
30
40
50
60
02345
0
0.012
0.020
0.032
0.040
246810
0.011
0.005
0.008
20 40 6010 30 50
0.012
0.006
0.004
0.007
0.6
0.8
1.0
1.2
1.4
−50 0 50 100 150
1.6
1.8
−25 25 75 125 175
1000
214161820
10000
0.004
0.016
0.028
0.036
357911
100
10
0.010
0.009
1
0.024
0.008
4681012
NTD4860N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
C
rss
01015
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
5
V
GS
= 0 V
T
J
= 25°C
C
oss
C
iss
V
GS
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS
)
Q
G
, TOTAL GATE CHARGE (nC)
I
D
= 30 A
T
J
= 25°C
Q
2
Q
1
Q
T
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
t, TIME (ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
t
r
t
d(off)
t
d(on)
t
f
V
DD
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
10 ms
20
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 13 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
0
500
1000
1500
2000
015
0
2
4
6
8
10
10 2052
5
1 10 100
1
10
100
1000
0.4 0.7
0
10
20
30
5
15
25
0.6 0.8
0.1 10 100
1
10
100
1000
0.1
1 25 125 17
5
40
60
80
20
0
75
100
100 15050
25
1
.0
0.5 0.9
30
50
70
10
90
NTD4860N
http://onsemi.com
6
TYPICAL PERFORMANCE CURVES
Figure 13. Thermal Response
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
t, TIME (ms)
0.1
1.0
0.01
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
R
q
JC
(t) = r(t) R
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
1.0E+00 1.0E+011.0E-011.0E-021.0E-031.0E-041.0E-05
ORDERING INFORMATION
Device Package Shipping
NTD4860NT4G DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4860N−1G IPAK
(Pb−Free)
75 Units / Rail
NTD4860N−35G IPAK Trimmed Lead
(3.5 ± 0.15 mm)
(Pb−Free)
75 Units / Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

NTD4860N-1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET 25V 65A 0.0075R DPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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