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BAW 56 B5003

P1-P3P4-P6P7-P9P10-P12
2007-09-19
1
BAW56...
Silicon Switching Diode
• For high-speed switching applications
• Common anode configuration
• BAW56S / U: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
BAW56
BAW56W
BAW56S
BAW56U
!
,
,
,
!
"
#$
,
, !
, "
Type Package Configuration Marking
BAW56
BAW56S
BAW56U
BAW56W
SOT23
SOT363
SC74
SOT323
common anode
double common anode
double common anode
common anode
A1s
A1s
A1s
A1s
1
Pb-containing package may be available upon special request
2007-09-19
2
BAW56...
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
80 V
Peak reverse voltage V
RM
85
Forward current I
F
200 mA
Non-repetitive peak surge forward current
t = 1 µs
t = 1 ms
t = 1 s, single
t = 1 s, double
I
FSM
4.5
1
0.5
0.75
A
Total power dissipation
BAW56, T
S
≤ 28°C
BAW56S, T
S
≤ 85°C
BAW56U, T
S
≤ 90°C
BAW56W, T
S
≤ 103°C
P
tot
330
250
250
250
mW
Junction temperature T
j
150 °C
Storage temperature T
st
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
BAW56
BAW56S
BAW56U
BAW56W
R
thJS
360
260
240
190
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-09-19
3
BAW56...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 µA
V
(BR)
85 - - V
Reverse current
V
R
= 70 V
V
R
= 25 V, T
A
= 150 °C
V
R
= 70 V, T
A
= 150 °C
I
R
-
-
-
-
-
-
0.15
30
50
µA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
mV
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
- - 2 pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, measured at I
R
= 1mA,
R
L
= 100 Ω
t
rr
- - 4 ns
Test circuit for reverse recovery time
EHN00019
Ι
F
D.U.T.
Oscillograph
Pulse generator: t
p
= 100ns, D = 0.05, t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph: R = 50Ω, t
r
= 0.35ns, C ≤ 1pF
P1-P3P4-P6P7-P9P10-P12

BAW 56 B5003

Mfr. #:
Buy BAW 56 B5003
Manufacturer:
Infineon Technologies
Description:
Diodes - General Purpose, Power, Switching Silicon Switch Diode 200mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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