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BAW56UE6327HTSA1
P1-P3
P4-P6
P7-P9
P10-P12
2007-09-19
1
BAW56...
Silicon Switching Diode
•
For high-speed switching applications
•
Common anode configuration
•
BAW56S / U: For orientation in reel see
package information below
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BAW56
BAW56W
BAW56S
BAW56U
!
,
,
,
!
"
#
$
,
,
!
,
"
Type
Package
Configuration
Marking
BAW56
BAW56S
BAW56U
BAW56W
SOT23
SOT363
SC74
SOT323
common anode
double common anode
double common anode
common anode
A1s
A1s
A1s
A1s
1
Pb-containing package may be available upon special request
2007-09-19
2
BAW56...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
80
V
Peak reverse voltage
V
RM
85
Forward current
I
F
200
mA
Non-repetitive peak surge forward current
t
= 1 µs
t
= 1 ms
t
= 1 s, single
t
= 1 s, double
I
FSM
4.5
1
0.5
0.75
A
Total power dissipation
BAW56,
T
S
≤
28°C
BAW56S,
T
S
≤
85°C
BAW56U,
T
S
≤
90°C
BAW56W,
T
S
≤
103°C
P
tot
330
250
250
250
mW
Junction temperature
T
j
150
°C
Storage temperature
T
st
g
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAW56
BAW56S
BAW56U
BAW56W
R
thJS
360
260
240
190
K/W
1
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2007-09-19
3
BAW56...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 µA
V
(BR)
85
-
-
V
Reverse current
V
R
= 70 V
V
R
= 25 V,
T
A
= 150 °C
V
R
= 70 V,
T
A
= 150 °C
I
R
-
-
-
-
-
-
0.15
30
50
µA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
mV
AC Characteristics
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
C
T
-
-
2
pF
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA, measured at
I
R
= 1mA,
R
L
= 100
Ω
t
rr
-
-
4
ns
Test circuit for reverse recovery time
EHN00019
Ι
F
D.U.T.
Oscillograph
Pulse generator:
t
p
= 100ns,
D
= 0.05,
t
r
= 0.6ns,
R
i
= 50
Ω
Oscillograph:
R
= 50
Ω
,
t
r
= 0.35ns,
C
≤
1pF
P1-P3
P4-P6
P7-P9
P10-P12
BAW56UE6327HTSA1
Mfr. #:
Buy BAW56UE6327HTSA1
Manufacturer:
Infineon Technologies
Description:
Diodes - General Purpose, Power, Switching Silicon Switch Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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Union
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