©2001 Fairchild Semiconductor Corporation
FYV0203S/DN/DP/DS
Rev. A, September 2001
Schottky Diode
Absolute Maximum Ratings
T
A
=25°
°°
°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics
T
A
=25°
°°
°C unless otherwise noted
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Symbol Parameter Value Units
V
RRM
Maximum Repetitive Reverse Voltage 30 V
I
F(AV)
Average Rectified Forward Current 0.2 A
I
FSM
Non-repetitive Peak Surge Current
Pulse Width = 1.0s
0.6 A
T
STG
Storage Temperature Range -65 to +150 °C
T
J
Operating Junction Temperature 150 °C
Symbol Parameter Value Units
R
θJA
Thermal Resistance, Junction to Ambient 430 °C/W
Symbol Parameter Min. Typ. Max. Units
V
F
*
Forward Voltage Drop
I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
I
F
= 200mA
-
-
-
-
-
-
210
270
340
390
485
600
240
320
400
500
800
1000
mV
I
R
*
Reverse Current
@ Rated V
R
T
A
= 25 °C
T
A
= 125 °C
-
-
0.2
130
2
-
uA
C
T
Total Capacitance
V
R
= 1V , f = 1.0 MHz - - 10
pF
t
rr
Reverse Recovery Time
I
F
= I
R
= 10mA, I
RR
= 1mA, R
L
= 100Ω --5
ns
FYV0203S/DN/DP/DS
3
1
2
SOT-23
Connection Diagram
2
Y
B
1
3
1
3
1
2 FYV0203DP
3
1
2 FYV0203D
3
1
2 FYV0203DN
3
1
FYV0203S
Marking
FYV0203S = YB1 FYV0203DP = YB3
FYV0203DN = YB2 FYV0203DS = YB4