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NSR0340V2T5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 1
1 Publication Order Number:
NSR0340V2T1/D
NSR0340V2
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0340V2 in a SOD−523 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
• Very Low Forward Voltage Drop − 410 mV @ 100 mA
• Low Reverse Current − 0.5 mA @ 25 V V
R
• 250 mA of Continuous Forward Current
• Power Dissipation of 200 mW with Minimum Trace
• Very High Switching Speed
• Low Capacitance − C
T
= 6 pF
• This is a Pb−Free Device
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs and PDAs
• GPS
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
40 Vdc
Forward Continuous Current (DC) I
F
250 mA
Non−Repetitive Peak Forward Surge
Current
I
FSM
1.0 A
ESD Rating: Human Body Model
Machine Model
ESD Class 2
Class A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
40 VOLT SCHOTTKY
BARRIER DIODE
Device Package Shipping
†
ORDERING INFORMATION
1
CATHODE
2
ANODE
NSR0340V2T1G SOD−523
(Pb−Free)
3000 / Tape & Reel
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOD−523
CASE 502
MARKING DIAGRAM
1
2
12
AD = Device Code
M = Date Code*
G = Pb−Free Package
*Date Code orientation position may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
AD M G
G
NSR0340V2T5G SOD−523
(Pb−Free)
8000 / Tape & Reel
NSR0340V2
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
600
200
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
300
400
°C/W
mW
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Leakage
(V
R
= 10 V)
(V
R
= 25 V)
(V
R
= 40 V)
I
R
0.2
0.5
1.5
1.0
3.0
6.0
mA
Forward Voltage
(I
F
= 10 mA)
(I
F
= 100 mA)
(I
F
= 200 mA)
V
F
310
410
470
350
450
510
mV
Total Capacitance
(V
R
= 10 V, f = 1 MHz)
CT
6.0
pF
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R
= 1.0 mA)
t
rr
5.0
ns
1. DC Current Source is adjusted for a Forward Current (I
F
) of 10 mA.
2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I
RM
of 10 mA.
3. Pulse Generator transition time << t
rr
.
4. I
R(REC)
is measured at 1 mA. Typically 0.1 X I
RM
or 0.25 X I
RM
.
5. t
p
» t
rr
R
L
= 50 W
Current
Transformer
DUT
750 mH
0.1 mF
50 W Output
Pulse
Generator
t
r
t
p
10%
90%
I
F
I
RM
t
rr
i
R(REC)
= 1 mA
Output Pulse
(I
F
= I
RM
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
Pulse Generator
Output
Figure 1. Recovery Time Equivalent Test Circuit
50 W Input
Oscilloscope
0.1 mF
0 V
V
R
DC Current
Source
Adjust for I
RM
+ −
NSR0340V2
http://onsemi.com
3
Figure 2. Forward Voltage Figure 3. Leakage Current
V
F
, FORWARD VOLTAGE (V) V
R
, REVERSE VOLTAGE (V)
Figure 4. Total Capacitance
V
R
, REVERSE VOLTAGE (V)
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE CURRENT (mA)
C
T
, TOTAL CAPACITANCE (pF)
150°C
125°C
−40°C
85°C
25°C
150°C
125°C
−40°C
85°C
25°C
T
A
= 25°C
0.01
0.1
1
10
100
1000
0 0.1 0.2 0.3 0.4 0.5 0.6
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
0 5 10 15 20 25 30 35 40
0
5
10
15
20
25
30
0 5 10 15 20 25 30 35 40
P1-P3P4-P4

NSR0340V2T5G

Mfr. #:
Buy NSR0340V2T5G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers SOD523 SCHTY BARRIER DIODE
Lifecycle:
New from this manufacturer.
Delivery:
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