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VN772K-E
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued)
(T
j
=25°C, unless otherwise specified)
Table 15. Dynamic
Table 16. Switching
Table 17. Source Drain Diode
Note: (*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
Table 18. Protections (-40°C < T
j
< 150°C, unless otherwise specified)
Symbol Parameter Test Conditions Min Typ Max Unit
g
fs
(*)
Forward
Transconductance
V
DD
=13V; I
D
=3.5A 9 S
C
OSS
Output Capacitance V
DS
=13V; f=1MHz; V
IN
=0V 220 pF
Symbol Parameter Test Conditions Min Typ Max Unit
t
d(on)
Turn-on Delay Time
V
DD
=15V; I
D
=3.5A
V
gen
=5V; R
gen
=R
IN MIN
=150Ω
100 300 ns
t
r
Rise Time 470 1500 ns
t
d(off)
Turn-off Delay Time 500 1500 ns
t
f
Fall Time 350 1000 ns
t
d(on)
Turn-on Delay Time
V
DD
=15V; I
D
=3.5A
V
gen
=5V; R
gen
=2.2KΩ
0.75 2.3 µs
t
r
Rise Time 4.6 14.0 µs
t
d(off)
Turn-off Delay Time 5.4 16.0 µs
t
f
Fall Time 3.6 11.0 µs
(dI/dt)
on
Turn-on Current Slope
V
DD
=15V; I
D
=3.5A
V
gen
=5V; R
gen
=R
IN MIN
=150Ω
6.5 A/µs
Q
i
Total Input Charge
V
DD
=12V; I
D
=3.5A; V
IN
=5V
I
gen
=2.13mA
18 nC
Symbol Parameter Test Conditions Min Typ Max Unit
V
SD
(*) Forward On Voltage I
SD
=3.5A; V
IN
=0V 0.8 V
t
rr
Reverse Recovery Time
I
SD
=3.5A; dI/dt=20A/µs
V
DD
=30V; L=200µH
220 ns
Q
rr
Reverse Recovery Charge 0.28 µC
I
RRM
Reverse Recovery Current 2.5 A
Symbol Parameter Test Conditions Min Typ Max Unit
I
lim
Drain Current Limit
V
IN
=5V; V
DS
=13V
V
IN
=5V; V
DS
=13V; T
j
=125°C
6
6.5
912
12
A
A
t
dlim
Step Response Current
Limit
V
IN
=5V; V
DS
=13V
4.0 µs
T
jsh
Overtemperature
Shutdown
150 175 °C
T
jrs
Overtemperature Reset 135 °C
I
gf
Fault Sink Current V
IN
= 5V; V
DS
=13V; T
j
=T
jsh
15 mA
E
as
Single Pulse
Avalanche Energy
starting T
j
=25°C; V
DD
=24V
V
IN
=5V; R
gen
=R
IN MIN
=150Ω; L=24mH
200 mJ
