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BYV430J-600PQ
P1-P3
P4-P6
P7-P9
P10-P10
WeEn Semiconductors
BYV430J-600P
Dual ultrafast power diode
BYV430J-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
3 May 2017
4 / 10
-50
0
50
100
150
200
0
10
20
30
40
T
h
(°C)
I
F(AV)
(A)
aab699-003
64°C
Fig. 3. Average forward current as a function of heatsink
temperature; typical values; per diode
10
-5
10
-4
10
-3
10
-2
10
10
2
10
3
10
4
t
p
(s)
I
FSM
(A)
I
F
T
j(init)
= 25 °C max
I
FSM
t
p
t
aab699-004
Fig. 4. Non-repetitive peak forward current as a function
of pulse width; sinusoidal waveform; maximum values;
per diode
WeEn Semiconductors
BYV430J-600P
Dual ultrafast power diode
BYV430J-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
3 May 2017
5 / 10
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
with heatsink compound; per diode;
Fig. 5
-
2.4
2.7
K/W
R
th(j-h)
thermal resistance
from junction to
heatsink
with heatsink compound; both diodes
conducting
-
1.75
2.2
K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
in free air
-
35
-
K/W
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
-3
10
-2
10
-1
1
10
t
p
(s)
Z
th(j-h)
(K/W)
P
t
t
p
T
t
p
δ =
T
aab699-005
δ = 0.5
δ = 0.3
δ = 0.1
δ = 0.05
single pulse
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration; maximum values;
per diode
WeEn Semiconductors
BYV430J-600P
Dual ultrafast power diode
BYV430J-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
3 May 2017
6 / 10
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
I
F
= 30 A; T
j
= 25 °C;
Fig. 6
-
1.5
2
V
V
F
forward voltage
I
F
= 30 A; T
j
= 150 °C;
Fig. 6
-
1.25
-
V
V
R
= 600 V; T
j
= 25 °C
-
-
10
µA
I
R
reverse current
V
R
= 600 V; T
j
= 150 °C
-
-
500
µA
Dynamic characteristics
I
F
= 30 A; V
R
= 30 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C;
Fig. 7
-
53
90
ns
I
F
= 30 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C;
Fig. 7
-
64
-
ns
t
rr
reverse recovery time
I
F
= 30 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 125 °C;
Fig. 7
-
113
-
ns
I
F
= 30 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C;
Fig. 7
-
7.3
-
A
I
RM
peak reverse recovery
current
I
F
= 30 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 125 °C;
Fig. 7
-
13.5
-
A
I
F
= 30 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C;
Fig. 7
-
245
-
nC
Q
r
recovered charge
I
F
= 30 A; V
R
= 200 V; dI
F
/dt = 200 A/
µs; T
j
= 125 °C;
Fig. 7
-
760
-
nC
0
1
2
3
0
20
40
60
80
V
F
(V)
I
F
(A)
aab699-006
(1)
(2)
(3)
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 6. Forward current as a function of forward voltage,
per diode
003aac562
t
rr
time
100 %
25 %
I
F
dl
F
dt
I
R
I
RM
Q
r
Fig. 7.
P1-P3
P4-P6
P7-P9
P10-P10
BYV430J-600PQ
Mfr. #:
Buy BYV430J-600PQ
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers BYV430J-600PQ/TO3PF/STANDARD M
Lifecycle:
New from this manufacturer.
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