4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00B
11/23/2010
IS62C10248AL, IS65C10248AL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
Vterm Terminal Voltage with Respect to GND –0.5 to +7.0 V
tstg Storage Temperature –65 to +150 °C
Pt Power Dissipation 1.5 W
iout DC Output Current (LOW) 20 mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating con-
ditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
Voh Output HIGH Voltage Vdd = Min., ioh = –1 mA 2.4 — V
Vol Output LOW Voltage Vdd = Min., iol = 2.1 mA — 0.4 V
Vih Input HIGH Voltage 2.2 Vdd + 0.5 V
Vil Input LOW Voltage
(1)
–0.3 0.8 V
ili Input Leakage GND ≤ Vin ≤ Vdd
Com. –1 1 µA
Ind. –2 2
Auto. –5 5
ilo Output Leakage
GND ≤ Vout ≤ Vdd Com. –1 1 µA
Outputs Disabled Ind. –2 2
Auto. –5 5
Note:
1.
Vil (min) = -0.3V DC; Vil (min) = -2.0V AC (pulse width -2.0 ns). Not 100% tested.
Vih (max) = Vdd + 0.3V DC; Vih (max) = Vdd + 2.0V AC (pulse width -2.0 ns). Not 100% tested.
