74HCT32
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4
DC CHARACTERISTICS (Voltages Referenced to GND)
V
CC
(V)
Guaranteed Limit
Symbol Parameter Condition −55 to 25°C ≤85°C ≤125°C Unit
V
IH
Minimum High−Level Input Voltage V
out
= 0.1V
|I
out
| ≤ 20mA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
V
IL
Maximum Low−Level Input Voltage V
out
= V
CC
− 0.1V
|I
out
| ≤ 20mA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
V
OH
Minimum High−Level Output
Voltage
V
in
= V
IL
|I
out
| ≤ 20mA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
V
in
= V
IL
|I
out
| ≤ 4.0mA 4.5 3.98 3.84 3.70
V
OL
Maximum Low−Level Output
Voltage
V
in
= V
IH
|I
out
| ≤ 20mA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V
V
in
= V
IH
|I
out
| ≤ 4.0mA 4.5 0.26 0.33 0.40
I
in
Maximum Input Leakage Current V
in
= V
CC
or GND 5.5 ±0.1 ±1.0 ±1.0
mA
I
CC
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
I
out
= 0mA
5.5 2.0 20 40
mA
DI
CC
Additional Quiescent Supply
Current
V
in
= 2.4V, Any One Input
V
in
= V
CC
or GND, Other Inputs
I
out
= 0mA
5.5
≥ −55°C 25 to 125°C
mA
2.9 2.4
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Total Supply Current = I
CC
+ ΣDI
CC
.
AC CHARACTERISTICS (C
L
= 50pF, Input t
r
= t
f
= 6ns)
V
CC
(V)
Guaranteed Limit
Symbol Parameter −55 to 25°C ≤85°C ≤125°C Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
4.5 15 19 22 ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
4.5 15 19 22 ns
C
in
Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
C
PD
Power Dissipation Capacitance (Per Buffer)*
Typical @ 25°C, V
CC
= 5.0 V, V
EE
= 0 V
pF
20
* Used to determine the no−load dynamic power consumption: P
D
= C
PD
V
CC
2
f + I
CC
V
CC
. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
