Product Standards
MOS FET
MTM862270LBF
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2.
*1 Pulse test
*2 Measurement circuit for Turn-on Time / Turn-off Time
Page
280
VDS = 10 V, VGS = 0, f = 1 MHz
170
ID = 1.0 A, VGS = 4.0 V
4.0 ID = 1.0 A, VDS = 10 V
18
3.0
10
RDS(on)1
S
2of6
ID = 1.0 mA, VDS = 10 V 0.4
80 105
Parameter Symbol Conditions Min Typ Max Unit
Drain-source Breakdown Voltage VDSS
ID = 1.0 mA, VGS = 0 20 V
Gate-source Leakage Current IGSS
VGS =
8.0 V, VDS = 0
Zero Gate Voltage Drain Current IDSS
1.0 VDS = 20 V, VGS = 0
Drain-source On-state Resistance
*1
0.85
RDS(on)3
ID = 0.5 A, VGS = 1.8 V
Gate-source Threshold Voltage Vth
Reverse Transfer Capacitance Crss
1.3
300
Output Capacitance Coss
Forward transfer admittance
*1
|Yfs|
Input Capacitance Ciss
ID = 1.0 A
toff
17
12ton
μA
μA
ns
ns
pF
pF
V
RDS(on)2
Turn-on time
*2
Turn-off time
*2
m
100 150
m
m
pF
50
ID = 0.5 A, VGS = 2.5 V
VDD = 10 V, VGS = 0 to 4 V
ID = 1.0 A
VDD = 10 V, VGS = 4 to 0 V
