NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 MAY 94
FEATURES
* 12 Volt V
CEO
* Gain of 400 at I
C
=3 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Flash gun convertors
* Battery powered circuits
* Motor drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
12 V
Collector-Emitter Voltage V
CEO
12 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
10 A
Continuous Collector Current I
C
3A
Practical Power Dissipation* P
totp
1.5 W
Power Dissipation at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
12 V
I
C
=100µA
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
12 V I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off Current I
CBO
0.1
µA
V
CB
=10V
Emitter Cut-Off Current I
EBO
0.1
µA
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.04
0.06
0.18
0.35
V
V
V
V
I
C
=0.1A, I
B
=1mA
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=50mA*
I
C
=3A, I
B
=20mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1 V I
C
=3A, I
B
=20mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1 V IC=3A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
500
400
100
I
C
=0.1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
E-Line
TO92 Compatible
ZTX688B
3-232
C
B
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency f
T
150 MHz I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance C
ibo
200 pF V
EB
=0.5V, f=1MHz
Output Capacitance C
obo
40 pF V
CB
=10V, f=1MHz
Switching Times t
on
t
off
40
500
ns
ns
I
C
=500mA, I
B1
=50mA
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX688B
-40 0.0001
Derating curve
T -Temperature (°C)
M
ax Po
we
r
D
issipati
o
n
-
(
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (°C/W)
10 10010.10.01-20 0 20
40 60 80 100 120 200180160140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperat
ure
0
D=1 (D.C.)
3-233
