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EAIST3015A2

P1-P3P4-P6P7-P9
LifecyclePhase:
Revision : 2
Expired Period: Forever
Release Date:2015-12-22 17:47:28.0
1
Copyright © 2015, Everlight Americas Inc. All Rights Reserved. Release Date : 2015/12/17. Issue No: 2
www.everlightamericas.com
1206 Package Chip Infrared LED With Inner Lens
EAIST3015A2
Features
․High reliability
․Small double-end package
․Peak wavelength λp=850nm
․Package in 8mm tape on 7” diameter reel
․Low forward voltage
․Pb free
․The product itself will remain within RoHS compliant version.
.․Compliance with EU REACH
Descriptions
.․EAIST3015A2 is an infrared emitting diode in miniature SMD package
which is molded in a water clear plastic with flat top view lens.
.․The device is spectrally matched with silicon photodiode and phototransistor.
Applications
․PCB mounted infrared sensor
․Infrared remote control units with high power requirement
․Smoke detector
․Infrared applied system
Device Selection Guide
Part Category Chip Material Resin Color
EAIST3015A2 GaAlAs Water Clear
LifecyclePhase:
Revision : 2
Expired Period: Forever
Release Date:2015-12-22 17:47:28.0
Data Sheet
1206 Package Chip Infrared LED With Inner Lens
EAIST3015A2
2
Copyright © 2015, Everlight Americas Inc. All Rights Reserved. Release Date : 2015/12/17. Issue No: 2
www.everlightamericas.com
Package Dimensions
Notes: 1.All dimensions are in millimeters
Notes: 2.Tolerances unless dimensions ±0.1mm
Notes: 3.Suggested pad dimension is just for reference only.
.Please modify the pad dimension based on individual need.
LifecyclePhase:
Revision : 2
Expired Period: Forever
Release Date:2015-12-22 17:47:28.0
Data Sheet
1206 Package Chip Infrared LED With Inner Lens
EAIST3015A2
3
Copyright © 2015, Everlight Americas Inc. All Rights Reserved. Release Date : 2015/12/17. Issue No: 2
www.everlightamericas.com
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol Rating Units
Continuous Forward Current I
F
65
mA
Reverse Voltage V
R
5
V
Operating Temperature T
opr
-25 ~ +85
℃
Storage Temperature T
stg
-40 ~ +85
℃
Soldering Temperature *1 T
sol
260
℃
Power Dissipation at(or below)
25℃Free Air Temperature
P
d
130
mW
Notes: *1. Soldering time
≦
5 seconds.
Electro-Optical Characteristics (Ta=25℃)
Parameter Symbol Condition Min. Typ. Max. Units
Radiant Intensity
Ie
I
F
=20mA
1.0 2.0 40.0
mW/sr
. I
F
=100mA
Pulse Width
≦
100μs ,Duty
≦
1%
-- 10 --
Peak
Wavelength
λp I
F
=20mA
-- 850
-- nm
Spectral
Bandwidth
Δλ I
F
=50mA
--
45
--
nm
Forward Voltage V
F
I
F
=20mA
--
1.45 1.65
V
. I
F
=100mA
Pulse Width
≦
100μs ,Duty
≦
1%
--
1.80 2.40
Reverse Current I
R
V
R
=5V -- -- 10
μA
View Angle
2θ1/2 I
F
=20mA -- 75 -- deg
Radiant Intensity Specifications for Bin Grading
Rank
Condition Min. Max. Units
G
I
F
=20mA
1.25 2.25
mW/sr
H
2.25 3.25
J
3.25 4.25
K
4.25 5.50
L
5.50 6.75
M
6.75 8.00
N1
8.00 40.00
P1-P3P4-P6P7-P9

EAIST3015A2

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Description:
Infrared Emitters Emitter SMD
Lifecycle:
New from this manufacturer.
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