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FST10020
P1-P2
V
RRM
= 20 V - 100 V
I
F
= 100 A
Features
• High Surge Capability
TO-249AB
Package
• Ty
pes up to 100V V
RRM
Parameter
Sy
mbol
FST10020
FST10030
Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
20
30
V
Silicon Pow
er
Schottk
y
Diode
FST10020 th
ru FST10040
FST10040
35
FST10035
Maximu
m ratings, at T
j
= 25 °C, unless oth
erwise specified
40
Conditions
pp
g
RMS rev
erse voltage
V
RMS
14
21
V
DC blocking voltage
V
DC
20
30
V
Continuous forward current
I
F
100
100
A
Operating temperature
T
j
-40 to 125
-40 to 125
°C
Storage temperature
T
stg
-40 to 175
-40 to 175
°C
Parameter
Sy
mbol
FST10020
FST10030
Unit
Diode forward v
oltage
0.65
0.65
22
600
600
Thermal ch
aracteristics
Thermal resistance, junction -
case
R
thJC
1.0
1.0
°C/W
Electrical characteristics, at
Tj = 25 °C, unless ot
herwise specified
Surge non-repetitive forward
current, Half Sine W
ave
I
F,SM
Reverse current
I
R
V
F
600
A
V
R
= 20 V, T
j
= 25 °C
I
F
= 100 A, T
j
= 25 °C
T
C
≤
100 °C
Conditions
25
1000
1000
-40 to 175
FST10040
22
FST10035
1.0
V
R
= 20 V, T
j
= 125 °C
1.0
0.65
0.65
600
mA
V
-40 to 175
100
100
1000
1000
28
40
35
-40 to 125
-40 to 125
T
C
= 25 °C, t
p
= 8.3 ms
www.genesicsemi.com
1
FST10020 th
ru FST10040
www.genesicsemi.com
2
P1-P2
FST10020
Mfr. #:
Buy FST10020
Manufacturer:
GeneSiC Semiconductor
Description:
Schottky Diodes & Rectifiers 20V - 100A Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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Union
Products related to this Datasheet
FST10030
FST10040
FST10020
FST10035