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FST10035

P1-P2
V
RRM
= 20 V - 100 V
I
F
= 100 A
Features
• High Surge Capability TO-249AB Package
• Types up to 100V V
RRM
Parameter Symbol FST10020 FST10030 Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
20 30 V
Silicon Power
Schottk
y
Diode
FST10020 thru FST10040
FST10040
35
FST10035
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
40
Conditions
pp g
RMS reverse voltage
V
RMS
14 21 V
DC blocking voltage
V
DC
20 30 V
Continuous forward current
I
F
100 100 A
Operating temperature
T
j
-40 to 125 -40 to 125 °C
Storage temperature
T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol FST10020 FST10030 Unit
Diode forward voltage 0.65 0.65
22
600 600
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
1.0 1.0 °C/W
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
600
A
V
R
= 20 V, T
j
= 25 °C
I
F
= 100 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
25
1000 1000
-40 to 175
FST10040
22
FST10035
1.0
V
R
= 20 V, T
j
= 125 °C
1.0
0.65 0.65
600
mA
V
-40 to 175
100 100
1000 1000
28
4035
-40 to 125 -40 to 125
T
C
= 25 °C, t
p
= 8.3 ms
www.genesicsemi.com
1
FST10020 thru FST10040
www.genesicsemi.com
2
P1-P2

FST10035

Mfr. #:
Buy FST10035
Manufacturer:
GeneSiC Semiconductor
Description:
Schottky Diodes & Rectifiers 35V - 100A Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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