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MSRT20060(A)

P1-P2
onlinecomponents.com
V
RRM
= 600 V - 1600 V
I
F
= 200 A
Features
• High Surge Capability Three Tower Package
• Types up to 1600 V V
RRM
Parameter Symbol Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
V
Silicon Standard
Recover
y
Diode
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
600 1000
Conditions MSRT20060(A) MSRT20080(A) MSRT200100(A)
800
MSRT20060(A) thru MSRT200100(A)
pp g
RMS reverse voltage
V
RMS
V
DC blocking voltage
V
DC
V
Continuous forward current
I
F
A
Operating temperature
T
j
°C
Storage temperature
T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
°C/W
MSRT20080(A)
0.18
200 200 200
3000 3000 3000
1000
1.2 1.2
-40 to 175
555
800600
10
MSRT200100(A)
1.2
10 10
-40 to 175 -40 to 175
-40 to 175 -40 to 175 -40 to 175
MSRT20060(A)
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 140 °C
Conditions
0.18 0.18
V
R
= 600 V, T
j
= 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
A
V
R
= 600 V, T
j
= 25 °C
I
F
= 200 A, T
j
= 25 °C
Reverse current
I
R
V
F
424 566 707
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1
onlinecomponents.com
MSRT20060(A) thru MSRT200100(A)
www.genesicsemi.com
2
P1-P2

MSRT20060(A)

Mfr. #:
Buy MSRT20060(A)
Manufacturer:
GeneSiC Semiconductor
Description:
DIODE MODULE 600V 200A 3TOWER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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