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BUK78150-55A,135

P1-P3P4-P6P7-P9P10-P12P13-P14
BUK78150-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 16 June 2010 6 of 13
NXP Semiconductors
BUK78150-55A
N-channel TrenchMOS standard level FET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
03nb91
0
5
10
15
20
25
30
0246810
V
DS
(V)
I
D
(A)
4.5
5.5
6.5
7.5
8.5
20
16
12
9.5
14
V
GS
(V) = 11
03nb90
80
100
120
140
160
180
200
5101520
V
GS
(V)
R
DSon
(mΩ)
03aa35
V
GS
(V)
0642
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
03nb88
0
0.5
1
1.5
2
2.5
3
3.5
0246810
I
D
(A)
g
fs
(S)
BUK78150-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 16 June 2010 7 of 13
NXP Semiconductors
BUK78150-55A
N-channel TrenchMOS standard level FET
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 10. Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
03nc22
0
2
4
6
8
10
0246810
V
GS
(V)
I
D
(A)
T
j
= 150 °C T
j
= 25 °C
03nb87
0
2
4
6
8
10
0246
Q
G
(nC)
V
GS
(V)
V
DD
= 44 V
V
DD
= 14 V
T
j
(°C)
−60 180120060
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03nb92
100
150
200
250
300
350
0 5 10 15 20
I
D
(A)
R
DSon
(mΩ)
5.5
6
6.5
7
8
V
GS
(V) = 10
BUK78150-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 16 June 2010 8 of 13
NXP Semiconductors
BUK78150-55A
N-channel TrenchMOS standard level FET
Fig 13. Normalized drain source on-state resistance
factor as a function of junction temperature
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
03nc24
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-60 -20 20 60 100 140 180
T
j
(
°
C)
a
03nb93
0
50
100
150
200
250
300
350
10
−2
10
−1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
03nc23
0
10
20
30
40
50
60
0.0 0.5 1.0 1.5 2.0 2.5
V
SD
(V)
I
S
(A)
T
j
= 150 °C T
j
= 25 °C
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK78150-55A,135

Mfr. #:
Buy BUK78150-55A,135
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 55V 5.5A SOT223
Lifecycle:
New from this manufacturer.
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