OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue 1.3 05/10
Page 2 of 3
Silicon Phototransistor
OP580
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Storage Temperature Range -40
o
C to +85
o
C
Operating Temperature Range -25
o
C to +85
o
C
Lead Soldering Temperature 260° C
(1)
Collector-Emitter Voltage 30 V
Collector Current 20 mA
Power Dissipation 75 mW
(2)
Emitter-Collector Voltage 5 V
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 2.17 mW/° C above 25° C.
3. E
E(APT)
is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the phototransistor being tested.
4. To calculate typical collector dark current in µA, use the formula I
CEO
= 10
(0.04 Ta-3.4)
where T
a
is the ambient temperature in ° C.
Electrical Characteristics (T
A
= 25°C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
I
C(ON)
On-State Collector Current 1.0 - - mA V
CE
= 5.0 V, E
E
= 5.0 mW/cm
2(3)
V
CE(SAT)
Collector-Emitter Saturation Voltage - - 0.4 V I
C
= 100 µA, E
E
= 2.0 mW/cm
2(3)
I
CE0
Collector-Emitter Dark Current - - 100 nA V
CE
= 5.0 V, E
E
= 0
(4)
V
(BR)CEO
Collector-Emitter Breakdown Voltage 30 - - V I
C
= 100 µA
V
(BR)ECO
Emitter-Collector Breakdown Voltage 5 - - V I
E
= 100 µA
t
r
, t
f
Rise Time , Fall Time - 15 - µs I
C
= 1 mA, R
L
= 1 KΩ
0
20
40
60
80
100
Wavelength (nm)
Relative Response vs Wavelength
900 1100 1000 800 700 600 500 400
Relative Response (%)
Relative Response (%)
Angular Position (Degrees)
Relative Response vs Angular Position
0
20
40
60
80
100
-90 30 60 0 -30 -60 90
