LT1169CS8#TRPBF

1
LT1169
Dual Low Noise,
Picoampere Bias Current,
JFET Input Op Amp
D
U
ESCRIPTIO
S
F
EA
T
U
RE
The LT1169 achieves a new standard of excellence in noise
performance for a dual JFET op amp. For the first time low
voltage noise (6nV/Hz) is simultaneously offered with
extremely low current noise (1fA/Hz), providing the low-
est total noise for high impedance transducer applications.
Unlike most JFET op amps, the very low input bias current
(5pA Typ) is maintained over the entire common mode
range which results in an extremely high input resistance
(10
13
). When combined with a very low input capaci-
tance (1.5pF) an extremely high input impedance results,
making the LT1169 the first choice for amplifying low level
signals from high impedance transducers. The low input
capacitance also assures high gain linearity when buffering
AC signals from high impedance transducers.
The LT1169 is unconditionally stable for gains of 1 or more,
even with 1000pF capacitive loads. Other key features are
0.6mV V
OS
and a voltage gain over 4 million. Each indi-
vidual amplifier is 100% tested for voltage noise, slew rate
(4.2V/µs), and gain-bandwidth product (5.3MHz).
The LT1169 is offered in the S8 and N8 packages.
A full set of matching specifications are provided for
precision instrumentation amplifier front ends. Specifica-
tions at ±5V supply operation are also provided. For an
even lower voltage noise please see the LT1113 data sheet.
Input Bias Current, Warmed Up: 20pA Max
100% Tested Low Voltage Noise: 8nV/Hz Max
S8 and N8 Package Standard Pinout
Very Low Input Capacitance: 1.5pF
Voltage Gain: 1.2 Million Min
Offset Voltage: 2mV Max
Input Resistance: 10
13
Gain-Bandwidth Product: 5.3MHz Typ
Guaranteed Specifications with ±5V Supplies
Guaranteed Matching Specifications
U
S
A
O
PP
L
IC
AT
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Photocurrent Amplifiers
Hydrophone Amplifiers
High Sensitivity Piezoelectric Accelerometers
Low Voltage and Current Noise Instrumentation
Amplifier Front Ends
Two and Three Op Amp Instrumentation Amplifiers
Active Filters
U
A
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PP
L
IC
AT
ITY
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CA
L
, LTC and LT are registered trademarks of Linear Technology Corporation.
Low Noise Light Sensor with DC Servo
8
+V
–V
4
LT1169 • TA01
R1
1M
C1
2pF
7
5
6
+
1/2 LT1169
R2C2 > C1R1
C
D
= PARASITIC PHOTODIODE CAPACITANCE
V
OUT
= 100mV/µWATT FOR 200nm WAVE LENGTH
330mV/µWATT FOR 633nm WAVE LENGTH
R5
10k
D2
1N914
V–
R4
1k
D1
1N914
R3
1k
1
3
2
+
1/2 LT1169
C2
0.022µF
HAMAMATSU
S1336-5BK
(908) 231-0960
V
OUT
R2
100k
C
D
2N3904
SOURCE RESISTANCE ()
10k
1k
100
10
1
100 10k 100k 1M1k
10M
LT1169 • TA02
TOTAL 1kHz VOLTAGE NOISE DENSITY (nV/ Hz)
100M
1G
+
V
N
R
SOURCE
T
A
= 25°C
V
S
= ±15V
V
N
SOURCE
RESISTANCE
ONLY
V
N
=
(V
OP AMP
)
2
+ 4kTR
S
+ 2qI
B
R
S
2
1kHz Output Voltage Noise
Density vs Source Resistance
2
LT1169
ORDER PART
NUMBER
A
U
G
W
A
W
U
W
ARB
S
O
LU
T
EXI T
I
S
Supply Voltage
55°C to 105°C ............................................... ±20V
105°C to 125°C ............................................... ±16V
Differential Input Voltage ...................................... ±40V
Input Voltage (Equal to Supply Voltage)............... ±20V
Output Short-Circuit Duration......................... Indefinite
Operating Temperature Range............... 40°C to 85°C
Storage Temperature Range................ –65°C to 150°C
Lead Temperature (Soldering, 10 sec) ................ 300°C
WU
U
PACKAGE
/
O
RDER I FOR ATIO
S8 PART MARKING
LT1169CN8
LT1169CS8
T
JMAX
= 150°C, θ
JA
= 80°C/W (N8)
T
JMAX
= 160°C, θ
JA
= 190°C/W (S8)
Consult factory for Industrial and Military grade parts.
V
S
= ±15V, V
CM
= 0V, T
A
= 25°C, unless otherwise noted.
E
LECTR
IC
AL C CHARA TERIST
ICS
SYMBOL PARAMETER CONDITIONS (Note 1) MIN TYP MAX UNITS
V
OS
Input Offset Voltage 0.60 2.0 mV
V
S
= ±5V 0.65 2.2 mV
I
OS
Input Offset Current Warmed Up (Note 2) 2.5 15 pA
T
J
= 25°C (Note 5) 0.7 4 pA
I
B
Input Bias Current Warmed Up (Note 2) 4.0 20 pA
T
J
= 25°C (Note 5) 1.5 5 pA
e
n
Input Noise Voltage 0.1Hz to 10Hz 2.4 µV
P-P
Input Noise Voltage Density f
O
= 10Hz 17 nV/Hz
f
O
= 1000Hz 6 8 nV/Hz
i
n
Input Noise Current Density f
O
= 10Hz, f
O
= 1kHz (Note 3) 1 fA/Hz
R
IN
Input Resistance
Differential Mode 10
14
Common Mode V
CM
= –10V to 13V 10
13
C
IN
Input Capacitance 1.5 pF
V
S
= ±5V 2.0 pF
V
CM
Input Voltage Range (Note 4) 13.0 13.5 V
10.5 11.0 V
CMRR Common Mode Rejection Ratio V
CM
= –10V to 13V 82 95 dB
PSRR Power Supply Rejection Ratio V
S
= ±4.5V to ±20V 83 98 dB
A
VOL
Large-Signal Voltage Gain V
O
= ±12V, R
L
= 10k 1000 4500 V/mV
V
O
= ±10V, R
L
= 1k 500 3000 V/mV
V
OUT
Output Voltage Swing R
L
= 10k ±13.0 ±13.8 V
R
L
= 1k ±12.0 ±13.0 V
SR Slew Rate R
L
2k (Note 6) 2.4 4.2 V/µs
GBW Gain-Bandwidth Product f
O
= 100kHz 3.3 5.3 MHz
Channel Separation f
O
= 10Hz, V
O
= ±10V, R
L
= 1k 126 dB
I
S
Supply Current per Amplifier 5.3 6.50 mA
V
S
= ±5V 5.3 6.45 mA
V
OS
Offset Voltage Match 0.8 3.5 mV
I
B
+
Noninverting Bias Current Match Warmed Up (Note 2) 3 20 pA
CMRR Common Mode Rejection Match (Note 8) 78 94 dB
PSRR Power Supply Rejection Match (Note 8) 80 95 dB
1169
1
2
3
4
8
7
6
5
TOP VIEW
N8 PACKAGE
8-LEAD PDIP
B
A
OUT A
IN A
+IN A
V
V
+
OUT B
IN B
+IN B
S8 PACKAGE
8-LEAD PLASTIC SO
3
LT1169
E
LECTR
IC
AL C CHARA TERIST
ICS
V
S
= ±15V, V
CM
= 0V, 0°C T
A
70°C, (Note 9), unless otherwise noted.
SYMBOL PARAMETER CONDITIONS (Note 1) MIN TYP MAX UNITS
V
OS
Input Offset Voltage 0.7 3.2 mV
V
S
= ±5V 0.8 3.4 mV
V
OS
Average Input Offset Voltage Drift (Note 5) 20 50 µV/°C
Temp
I
OS
Input Offset Current 10 50 pA
I
B
Input Bias Current 180 400 pA
V
CM
Input Voltage Range 12.9 13.4 V
10.0 10.8 V
CMRR Common Mode Rejection Ratio V
CM
= –10V to 12.9V 79 94 dB
PSRR Power Supply Rejection Ratio V
S
= ±4.5V to ±20V 81 97 dB
A
VOL
Large-Signal Voltage Gain V
O
= ±12V, R
L
= 10k 800 3400 V/mV
V
O
= ±10V, R
L
= 1k 400 2400 V/mV
V
OUT
Output Voltage Swing R
L
= 10k ±12.5 ±13.5 V
R
L
= 1k ±11.5 ±12.7 V
SR Slew Rate R
L
2k (Note 6) 1.9 4 V/µs
GBW Gain-Bandwidth Product f
O
= 100kHz 3 4.2 MHz
I
S
Supply Current per Amplifier 5.3 6.55 mA
V
S
= ±5V 5.3 6.50 mA
V
OS
Offset Voltage Match 1.5 5 mV
I
B
+
Noninverting Bias Current Match 5.5 50 pA
CMRR Common Mode Rejection Match (Note 8) 74 93 dB
PSRR Power Supply Rejection Match (Note 8) 77 93 dB
SYMBOL PARAMETER CONDITIONS (Note 1) MIN TYP MAX UNITS
V
OS
Input Offset Voltage 0.8 3.8 mV
V
S
= ±5V 0.9 4.0 mV
V
OS
Average Input Offset Voltage Drift 20 50 µV/°C
Temp
I
OS
Input Offset Current 30 200 pA
I
B
Input Bias Current 320 1200 pA
V
CM
Input Voltage Range 12.6 13.0 V
10.0 10.5 V
CMRR Common Mode Rejection Ratio V
CM
= –10V to 12.6V 78 93 dB
PSRR Power Supply Rejection Ratio V
S
= ±4.5V to ±20V 79 96 dB
A
VOL
Large-Signal Voltage Gain V
O
= ±12V, R
L
= 10k 750 3000 V/mV
V
O
= ±10V, R
L
= 1k 300 2000 V/mV
V
OUT
Output Voltage Swing R
L
= 10k ±12.5 ±12.5 V
R
L
= 1k ±11.3 ±12.0 V
SR Slew Rate R
L
2k 1.8 3.8 V/µs
GBW Gain-Bandwidth Product f
O
= 100kHz 2.7 4 MHz
I
S
Supply Current per Amplifier 5.30 6.55 mA
V
S
= ±5V 5.25 6.50 mA
V
S
= ±15V, V
CM
= 0V, –40°C T
A
85°C, (Note 7), unless otherwise noted.

LT1169CS8#TRPBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Operational Amplifiers - Op Amps Dual L/Noise Prec,pA Ib,JFET Input OA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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