IC
–
VCE Characteristics
(Typical)
hFE
–
IC Characteristics
(Typical)
hFE
–
IC
Temperature Characteristics (Typical)
IC
–
VBE Temperature Characteristics
(Typical)
VCE(sat)
–
IB Characteristics
(Typical)
Pc
–
Ta Derating
0
0
–4
–8
–12
–16
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–50mA
–100mA
I
B
=–20mA
–600mA
–500mA
–400mA
–300mA
–200mA
–150mA
–750mA
0
–3
–2
–1
0 –0.2 –0.4 –1.0–0.6 –0.8
Base Current I
B(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=–10A
–5A
–0.02 –0.1 –1 –10–15
10
50
100
200
Collector Current I
C(A)
DC Current Gain hFE
(VCE=–4V)
Typ
Safe Operating Area (Single Pulse)
–2 –10 –100 –200
–0.2
–1
–0.5
–10
–40
–5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
10ms
fT
–
IE Characteristics
(Typical)
0.02 0.1 1 10
0
20
40
60
80
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current I
E(A)
Typ
1 10 100 1000 2000
Time t(ms)
0.1
1
2
0.5
Transient Thermal Resistance θj-a(˚C/W)
θj-a
–
t Characteristics
160
120
80
40
5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
0
–15
–10
–5
0–2–1
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5–0.5 –5 –10 –15
30
50
100
200
Collector Current I
C(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
With Infinite heatsink
Without Heatsink
∗hFE Rank O(50
to
100), P(70
to
140), Y(90
to
180)
■
Absolute maximum ratings
■
Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
(Ta=25°C)
(Ta=25°C)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921)
Application : Audio and General Purpose
External Dimensions MT-200
Weight : Approx 18.4g
a. Part No.
b. Lot No.
